Microcapsular quantum dot-polymer composite, method for producing the composite, optical elements, and method for producing the optical elements

• US 10,069,044 B2
• Filed: 03/15/2013
• Issued: 09/04/2018
• Est. Priority Date: 03/16/2012
• Status: Active Grant

• Current Assignee: Industry-Academia Cooperation Group of Sejong University
• Original Assignee: Industry-Academia Cooperation Group of Sejong University
• Inventors: Seo, Young Soo, Yang, Hee Sung, Park, Sang Yul, Son, Hye Mi, Kim, Hyo Sun
• Primary Examiner(s): Choi, Ling Siu
• Assistant Examiner(s): Grinsted, Ronald
• Application Number:
  US14/385,758
• Publication Number:
  US 20150072092A1
• Time in Patent Office: 1,999 Days
• Field of Search: 428 3691
• CPC Class Codes: C09K 11/02 Use of particular materials as binders, particle coatings or suspension media therefor
• CPC Class Codes: C09K 11/565 with zinc cadmium
• CPC Class Codes: C09K 11/883 with zinc or cadmium
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48237 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: Y10T 428/1393 Multilayer [continuous layer]
• CPC Class Codes: Y10T 428/31801 Of wax or waxy material

Abstract

There are provided a microcapsular quantum dot-polymer composite, a method for producing the composite, optical elements, and a method for producing the optical elements. In order to produce the microcapsular quantum dot-polymer composite, a polymer having a functional group in the side chain is firstly heated in a first solvent to form a polymer solution. A quantum dot suspension consisting of quantum dots capped by a capping layer dispersed in a second solvent is added to the polymer solution to form a mixed solution. The mixed solution is cooled to form the quantum dot-polymer composite consisting of the quantum dots dispersed in the polymer matrix.

Claims

1. A composite particle comprising:

a particle body having a length in a range of 1-20 μ

m,

wherein the particle body comprises a polymer-containing matrix and semiconductive nanoparticles dispersed in the polymer-containing matrix,

wherein the polymer-containing matrix comprises a plurality of laminated plates that comprise a crystalline polymer material,

wherein at least part of the semiconductive nanoparticles are interposed between two immediately neighboring ones of the plurality of laminated plates such that some semiconductive particles are separated from other semiconductive nanoparticles by at least one intervening plate of the plurality of laminated plates in the polymer-containing matrix.

2. The composite particle of claim 1, wherein the plurality of laminated plates provides multiple inter-plate gaps, each of which is defined between two immediately neighboring ones of the plurality of laminated plates, wherein at least part of the semiconductive nanoparticles are distributed in each inter-plate gap.

3. The composite particle of claim 1, wherein an individual one of the semiconductive nanoparticles comprises a single-layered structure or multilayered structure.

4. The composite particle of claim 3, wherein the individual semiconductive nanoparticle comprises at least one selected from the group consisting of CdS, CdO, CdSe, CdTe, ZnS, ZnO, ZnSe, ZnTe, MnS, MnO, MnSe, MnTe, MgO, MgS, MgSe, MgTe, CaO, CaS, CaSe, CaTe, SrO, SrS, SrSe, SrTe, BaO, BaS, BaSe, BaTe, HgO, HgS, HgSe, HgTe, Al₂O₃, Al₂S₃, Al₂Se₃, Al₂Te₃, Ga₂O₃, Ga₂S₃, Ga₂Se₃, Ga₂Te₃, In₂O₃, In₂S₃, In₂Se₃, In₂Te₃, SiO₂, GeO₂, SnO₂, SnS, SnSe, SnTe, PbO, PbO₂, PbS, PbSe, PbTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, BP, Si, and Ge.

5. The composite particle of claim 3, wherein the individual semiconductive nanoparticle comprises a capping layer over a semiconductive material, wherein the capping layer configured for inhibiting the semiconductive nanoparticles from aggregating.

6. The composite particle of claim 5, wherein the capping layer comprises at least one selected from the group consisting of tri-n-octylphosphine oxide (TOPO), stearic acid, palmitic acid, octadecylamine, hexadecylamine, dodecylamine, lauric acid, oleic acid, and hexylphosphonic acid.

7. The composite particle of claim 1, wherein the semiconductive nanoparticles comprise quantum dots.

8. The composite particle of claim 1, wherein the particle body is generally ellipsoidal.

9. The composite particle of claim 1, wherein the particle body has a thickness in a range of 100 nm to 2 μ

m.

10. The composite particle of claim 1, further comprising an amorphous polymer material interposed between two immediately neighboring ones of the plurality of laminated plates.

11. The composite particle of claim 1, wherein the crystalline polymer material comprises at least one of a polyolefin wax and a polyolefin- polymaleic anhydride copolymer wax.

12. The composite particle of claim 1, wherein the crystalline polymer material comprises a polyolefin comprising oxygen moieties in at least one of a main chain and side chains thereof.

13. The composite particle of claim 12, wherein the oxygen moieties are selected from the group consisting of —

OH, —

COOH, —

COH, —

O— and

—

CO.

14. The composite particle of claim 12, wherein the polyolefin has a softening point in a range of 70°

C. to 200°

C.

15. The composite particle of claim 12, wherein the polyolefin has an acid value of 1 mgKOH/g to 100 mgKOH/g.

16. The composite particle of claim 1, further comprising a passivation layer formed on an outer surface of the composite particle.

17. The composite particle of claim 16, wherein the passivation layer comprises an inorganic material in the form of particles, wherein the inorganic material is selected from the group consisting of titanium oxide, silicon oxide and aluminum oxide.

18. An optical device comprising:

a substrate; and

an optical layer formed over the substrate and comprising the composite particle of claim 1 in plurality.

19. A light emitting device comprising:

a substrate;

a light source disposed on the substrate;

an optical layer formed over the substrate and further over the light source, wherein the optical layer comprises the composite particle of claim 1 in plurality.

20. A suspension comprising:

liquid; and

the composite particle of claim 1 in plurality dispersed in the liquid.