Wafer-level light emitting diode package and method of fabricating the same

• US 10,069,048 B2
• Filed: 12/22/2016
• Issued: 09/04/2018
• Est. Priority Date: 09/24/2010
• Status: Active Grant

• Current Assignee: Seoul Semiconductor Co., Ltd.
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Seo, Won Cheol, Cho, Dae Sung
• Primary Examiner(s): Nguyen, Cuong Q
• Application Number:
  US15/389,413
• Publication Number:
  US 20170104139A1
• Time in Patent Office: 621 Days
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 2933/0075 relating to heat extraction or cooling elements
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: H01L 33/38 : with a particular shape
• CPC Class Codes: H01L 33/382 : the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/385 : the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/405 : Reflective materials
• CPC Class Codes: H01L 33/42 : Transparent materials
• CPC Class Codes: H01L 33/44 : characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 : Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/486 : adapted for surface mounting
• CPC Class Codes: H01L 33/50 : Wavelength conversion elements
• CPC Class Codes: H01L 33/502 : Wavelength conversion materials
• CPC Class Codes: H01L 33/505 : characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/507 : the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/58 : Optical field-shaping elements
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/642 : characterized by the shape
• CPC Class Codes: H01L 33/647 : the elements conducting electric current to or from the semiconductor body

Abstract

Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.

Claims

1. A light emitting diode (LED) package comprising:

a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer interposed between the first and second semiconductor layers, wherein the semiconductor stack includes external sidewalls on opposite sides of the semiconductor stack formed along the first conductive type semiconductor layer, the active layer and the second conductive type semiconductor layer;

a first electrical contact disposed to contact with the first conductive type semiconductor layer and to provide a first electrical contact path to the semiconductor stack; and

a second electrical contact disposed to contact with the second conductive type semiconductor layer and to provide a second electrical contact path to the semiconductor stack

an inner insulation layer formed over sides of the semiconductor stack to cover the external sidewalls of the semiconductor stack to protect the semiconductor stack from an external environment; and

an outer insulation layer formed over the sides of the semiconductor stack to cover a side surface of the inner insulation layer to provide additional protection of the semiconductor stack from the external environment.

2. The LED package of claim 1, wherein the inner insulation layer includes a single layer which includes silicon oxide or silicon nitride.

3. The LED package of claim 1, wherein the inner insulation layer includes an optically reflective structure.

4. The LED package of claim 1, wherein the inner insulation layer includes a distributed Bragg reflector.

5. The LED package of claim 1, wherein the inner insulation layer includes layers of silicon oxide or silicon nitride.

6. The LED package of claim 1, wherein the inner insulation layer includes a silicon oxide layer and a distributed Bragg reflector.

7. The LED package of claim 1, wherein the inner insulation layer extends to cover the second electrical contact to protect the second electrical contact from an external environment.

8. The LED package of claim 1, wherein the outer insulation layer includes a single layer including silicon dioxide or silicon nitride.

9. The LED package of claim 1, wherein the outer insulation layer includes multiple layers.

10. The LED package of claim 1, wherein the outer insulation layer includes an optically reflective structure.

11. The LED package of claim 1, wherein the outer insulation layer includes a distributed Bragg reflector.

12. The LED package of claim 1, wherein the outer insulation layer extends to cover the first electrical contact and the second electrical contact to protect the first electrical contact and the second electrical contact from the external environment.

13. The LED package of claim 1, further comprising:

a first bump electrically coupled to the first conductive type semiconductor layer by the first electrical contact;

a second bump electrically coupled to the second conductive type semiconductor layer by the second electrical contact; and

an additional insulation layer formed over the inner insulation layer and the outer insulation layer to cover side surfaces of the first and second bumps to protect the first and second bumps from an external environment.

14. The LED package of claim 13, wherein the additional insulation layer includes a polymer.

15. The LED package of claim 1, wherein the second conductive type semiconductor layer has a thickness smaller than that of the first conductive type semiconductor layer.

16. The LED package of claim 1, wherein the first conductive type semiconductor layer includes a roughened surface.

17. A light emitting diode (LED) package comprising:

a semiconductor stack including a first conductive type semiconductor layer having a first surface and a second surface opposite to the first surface, an active layer formed on the first surface of the first conductive type semiconductor layer, and a second conductive type semiconductor layer formed on the active layer, the semiconductor stack having external sidewalls on opposite sides of the semiconductor stack formed along the first conductivity type semiconductor layer, the second conductivity type semiconductor layer and the active layer;

contact holes formed in the semiconductor stack and surrounded by the second conductive type semiconductor layer and the active layer, the contact holes located between the external sidewalls and exposing portions of the first conductive type semiconductor layer;

a first insulation layer formed to cover the external sidewalls of the semiconductor stack;

a second insulation layer formed to cover a side surface of the first insulation layer and to cover the side surface of the semiconductor stack;

a first electrical contact path disposed closer to the first surface of the first conductive type semiconductor layer than the second surface of the first conductive type semiconductor layer and electrically coupled to the first conductive type semiconductor layer through the exposed portions of the first conductive type semiconductor layer;

a second electrical contact path disposed closer to the first surface of the first conductive type semiconductor layer than the second surface of the first conductive type semiconductor layer and electrically coupled to the second conductive type semiconductor layer; and

a third insulation layer formed over the first insulation layer to cover the semiconductor stack or cover the first and second electrical contact paths.

18. The LED package of claim 17, wherein each of the first insulation layer and the second insulation layer includes a transparent insulation layer.

19. The LED package of claim 17, wherein the first insulation layer includes a transparent insulation layer and the second insulation layer includes an optically reflective structure.

20. The LED package of claim 19, wherein the optically reflective structure includes a distributed Bragg reflector.

21. The LED package of claim 19, wherein the optically reflective structure includes a distributed Bragg reflector reflecting light at a wavelength corresponding to blue light, green light, or red light.

22. The LED package of claim 17, wherein the third insulation layer extends to cover the first electrical contact path and the second electrical contact path to protect the first electrical contact path and the second electrical contact path from the external environment.

23. The LED package of claim 17, further comprising an additional insulation layer formed to cover a side surface of the third insulation layer and to cover the side surface of the semiconductor stack.

24. The LED package of claim 17, further including a wavelength convertor arranged on the second surface of the first conductive type semiconductor layer and including one or more phosphor materials each converting light emitted from the active layer into light at a different wavelength.

25. The LED package of claim 17, wherein the second conductive type semiconductor layer has a thickness smaller than that of the first conductive type semiconductor layer.

26. The LED package of claim 17, wherein the first surface of the first conductive type semiconductor layer has a roughness.