Diffused resistive memory cell with buried active zone
First Claim
1. A ReRAM device, comprising:
- a first contact;
a second contact; and
an active layer disposed between the first contact and the second contact, wherein the active layer comprises;
a diffused zone adjacent the first contact, wherein the diffused zone has a first composition; and
an active zone disposed between the diffused zone and the second contact, wherein the active zone has a second composition different from the first composition of the diffused zone, wherein the diffused zone is placed within the active layer and wherein the diffused zone has at least one side and one bottom surface contacting the active layer.
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Abstract
An apparatus for non-volatile memory, and more specifically a ReRAM device with a buried resistive memory cell. The memory cell includes a first contact disposed on a substrate, an active layer, a second contact, a first diffused zone disposed within the active layer, a second diffused zone disposed within the active layer, and an active switching zone disposed within the active layer in between the first diffused zone and the second diffused zone. In one embodiment, the active zone may be doped by diffusion or ion implantation and/or may be fabricated utilizing a self-aligned process. In another embodiment, the memory cell may combine a deep implant and shallow diffusion well to create the active zone. The vertically and laterally isolated buried resistive memory cell concentrates the electric field away from the edges of the device and eliminates the effects of interface impurities and contaminants.
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Citations
7 Claims
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1. A ReRAM device, comprising:
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a first contact; a second contact; and an active layer disposed between the first contact and the second contact, wherein the active layer comprises; a diffused zone adjacent the first contact, wherein the diffused zone has a first composition; and an active zone disposed between the diffused zone and the second contact, wherein the active zone has a second composition different from the first composition of the diffused zone, wherein the diffused zone is placed within the active layer and wherein the diffused zone has at least one side and one bottom surface contacting the active layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A ReRAM device, comprising:
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a first contact; a second contact; and an active layer disposed between the first contact and the second contact, wherein the active layer has an oxygen gradient, wherein the active layer comprises; a diffused zone adjacent the first contact, wherein the diffused zone has a first composition; and an active zone disposed between the diffused zone and the second contact, wherein the active zone has a second composition different from the first composition of the diffused zone wherein the gradient is created by a dopant selected from the group consisting of indium or silicon.
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Specification