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Diffused resistive memory cell with buried active zone

  • US 10,069,068 B2
  • Filed: 05/03/2016
  • Issued: 09/04/2018
  • Est. Priority Date: 05/03/2016
  • Status: Active Grant
First Claim
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1. A ReRAM device, comprising:

  • a first contact;

    a second contact; and

    an active layer disposed between the first contact and the second contact, wherein the active layer comprises;

    a diffused zone adjacent the first contact, wherein the diffused zone has a first composition; and

    an active zone disposed between the diffused zone and the second contact, wherein the active zone has a second composition different from the first composition of the diffused zone, wherein the diffused zone is placed within the active layer and wherein the diffused zone has at least one side and one bottom surface contacting the active layer.

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