Image sensors with LED flicker mitigaton global shutter pixles
First Claim
1. An image sensor pixel comprising:
- a photodiode that generates charge in response to incident light during an exposure period;
a threshold transistor that is coupled to the photodiode and that is set to a threshold voltage, wherein a portion of the generated charge overflows past the threshold transistor as overflow charge;
a reset transistor coupled to a voltage supply, wherein the threshold transistor is interposed between the photodiode and the reset transistor;
a first storage structure coupled to the threshold transistor;
a second storage structure coupled to the photodiode through the first storage structure; and
a floating diffusion node coupled to the second storage structure.
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Accused Products
Abstract
An image sensor may include one or more pixels having a charge steering structure that may selectively route charge from a photodiode to increase the dynamic range of the pixel. The charge steering structure may be a coupled gate structure that routes overflow charge to a voltage supply and to one or more integrating storage structures during an exposure period. The charge steering structure may be two integrating storage structures directly connected to the photodiode that each integrate charge generated by the photodiode in an alternating fashion during an exposure period. Storage structures and transistors within the charge steering structure may receive control signals, which may be asserted in a mutually exclusive manner. Pixels may also include a dual-gain structure, which may provide additional charge storage capacity.
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Citations
20 Claims
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1. An image sensor pixel comprising:
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a photodiode that generates charge in response to incident light during an exposure period; a threshold transistor that is coupled to the photodiode and that is set to a threshold voltage, wherein a portion of the generated charge overflows past the threshold transistor as overflow charge; a reset transistor coupled to a voltage supply, wherein the threshold transistor is interposed between the photodiode and the reset transistor; a first storage structure coupled to the threshold transistor; a second storage structure coupled to the photodiode through the first storage structure; and a floating diffusion node coupled to the second storage structure. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An image sensor comprising:
an array of pixels arranged in rows and columns, wherein each pixel comprises; a photosensitive element that generates charge in response to impinging light; a charge steering structure coupled to the photosensitive element, wherein the charge steering structure comprises a threshold transistor that is coupled to the photosensitive element and that is set to a threshold voltage and wherein a portion of the generated charge overflows past the threshold transistor as overflow charge; a storage structure coupled to the photosensitive element through the charge steering structure; and a floating diffusion node coupled to the storage structure. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 20)
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15. An imaging system comprising:
an image sensor having an array of pixels arranged in rows and columns, wherein each pixel in the array of pixels comprises; a photodiode that generates charge in response to incident light; a first charge storage structure coupled to the photodiode, wherein the first charge storage structure comprises one of a storage gate and a storage diode; a second charge storage structure coupled to the photodiode, wherein the second charge storage structure comprises one of a storage gate and a storage diode; a floating diffusion node coupled to the first charge storage structure; and a third charge storage structure coupled between the second charge storage structure and the floating diffusion node. - View Dependent Claims (16, 17, 18, 19)
Specification