Measuring a process parameter for a manufacturing process involving lithography

• US 10,073,357 B2
• Filed: 01/28/2015
• Issued: 09/11/2018
• Est. Priority Date: 02/21/2014
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Van Der Schaar, Maurits, Den Boef, Arie Jeffrey, Adam, Omer Abubaker Omer, Huang, Te-Chih, Zhang, Youping
• Primary Examiner(s): Kreutzer, Colin
• Application Number:
  US15/117,409
• Publication Number:
  US 20160349627A1
• Time in Patent Office: 1,322 Days
• Field of Search: 355 67, 355 68, 355 77, 356399-401
• CPC Class Codes: G01N 21/47 Scattering, i.e. diffuse reflection G01N21/25, G01N21/41 take precedence G01N21/55 takes precedence
• CPC Class Codes: G01N 21/8806 Specially adapted optical and illumination features
• CPC Class Codes: G01N 2201/12 Circuits of general importance; Signal processing
• CPC Class Codes: G03F 7/70633 Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
• CPC Class Codes: G03F 7/70683 Mark designs
• CPC Class Codes: G03F 9/70 for microlithography measuring printed patterns for monitoring overlay G03F7/70633 or focus G03F7/70641; projection system adjustment G03F7/70258; position control G03F7/70775
• CPC Class Codes: G03F 9/7076 Mark details, e.g. phase grating mark, temporary mark

Abstract

There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.

Claims

1. A method of measuring a process parameter for a manufacturing process involving lithography, comprising:

performing first and second measurements of overlay error in a region on a substrate using respective first and second target structures; and

obtaining a measure of the process parameter based on the first and second measurements of overlay error,

wherein the first and second target structures are configured such that the first measurement of overlay error is more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.

2. The method according to claim 1, wherein the process parameter comprises an asymmetry in a feature of a target structure formed on the substrate by a lithographic process.

3. The method according to claim 2, wherein the asymmetry in a feature comprises an asymmetry in the cross-sectional shape of a line or trench in a line grating of the target structure, the asymmetry being defined with respect to a mirror plane cutting through the center of the line or trench when viewed along the line or trench, and extending perpendicular to the plane of the grating.

4. The method according to claim 3, wherein the asymmetry in a feature comprises an asymmetry in the angles of side-walls defining a line in the line grating relative to a normal to the plane of the grating.

5. The method according to claim 3, wherein the asymmetry in a feature comprises a tilt in the floor of a trench formed between lines of the line grating.

6. The method according to claim 1, wherein simulation of the first and second measurements of overlay error is used to design the first measurement of overlay error to be more sensitive to a perturbation in the process parameter than the second measurement of overlay by a known amount.

7. The method according to claim 1, wherein:

the first and second measurements of overlay error use radiation having first wavelength characteristics and first polarization characteristics to measure the overlay error of the first and second target structures, respectively.

8. The method according to claim 1, wherein the first and second target structures each comprise a line grating.

9. The method according to claim 1, wherein the process parameter comprises a variation from a reference value of one or more of the following:

etch depth of a feature formed on the substrate, thickness of a layer or feature formed on the substrate, relative permittivity of material forming a layer or feature on the substrate, refractive index of material forming a layer or feature on the substrate.

10. A non-transitory computer readable product comprising machine-readable instructions for causing a processor to perform the operations step of comprising:

performing first and second measurements of overlay error in a region on a substrate using respective first and second target structures; and

obtaining a measure of the process parameter based on the first and second measurements of overlay error,

wherein the first and second target structures are configured such that the first measurement of overlay error is more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.

11. An inspection apparatus for measuring a process parameter for a manufacturing process involving lithography, comprising:

an optical system arranged to direct radiation onto a substrate;

a detector arranged to detect radiation after interaction between the radiation and the substrate;

an overlay error processing module arranged to obtain a measure of overlay error by analyzing an output from the detector; and

a process parameter obtaining module arranged to obtain a measure of the process parameter by causing the optical system, detector and overlay error processing module to;

perform first and second measurements of overlay error in a region on the substrate using respective first and second target structures; and

obtain a measure of the process parameter based on the first and second measurements of overlay error, wherein

the first and second target structures are configured such that the first measurement of overlay error is more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.

12. A lithographic system comprising:

a lithographic apparatus comprising;

an illumination system arranged to illuminate a pattern;

a projection optical system arranged to project an image of the pattern onto a substrate; and

an inspection apparatus comprising,

an optical system arranged to direct radiation onto a substrate;

a detector arranged to detect radiation after interaction between the radiation and the substrate;

an overlay error processing module arranged to obtain a measure of overlay error by analyzing an output from the detector; and

a process parameter obtaining module arranged to obtain a measure of the process parameter by causing the optical system, detector and overlay error processing module to;

perform first and second measurements of overlay error in a region on the substrate using respective first and second target structures; and

obtain a measure of the process parameter based on the first and second measurements of overlay error, wherein

the first and second target structures are configured such that the first measurement of overlay error is more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount;

wherein the lithographic apparatus is arranged to use one or more process parameters measured by the inspection apparatus in applying the pattern to the substrate or further substrates.

13. A method of manufacturing devices wherein a device pattern is applied to a series of substrates using a lithographic process, the method comprising:

measuring a process parameter by inspecting first and second target structures formed as part of or beside the device pattern on at least one of the substrates using a method comprising,

performing first and second measurements of overlay error in a region on a substrate using respective first and second target structures; and

obtaining a measure of the process parameter based on the first and second measurements of overlay error,

wherein the first and second target structures are configured such that the first measurement of overlay error is more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount; and

controlling the lithographic process for later substrates in accordance with the result of the measuring of the process parameter.