Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory
First Claim
Patent Images
1. An apparatus, comprising:
- a ferroelectric memory cell including first and second selection components;
first and second digit lines coupled to the first and second selection components, respectively;
a first access line coupled to a gate of the first selection component;
a second access line coupled to a gate of the second selection component;
a sense component including a first sense node and a second sense node, the sense component configured to sense a voltage difference between the first and second sense nodes, amplify the voltage difference, and latch the voltage difference;
a first switch coupled to the first digit line and the first sense node, the first switch configured to selectively couple the first digit line to the first sense node responsive to a first control signal;
a second switch coupled to the second digit line and the second sense node, the second swatch coupled to selectively couple the second digit line to the second sense node responsive to a second control signal.
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Abstract
Apparatuses and methods are disclosed that in ferroelectric memory and for operating ferroelectric memory. An example apparatus includes a capacitor having a first plate, a second plate, and a ferroelectric dielectric material. The apparatus further includes a first digit line and a first selection component configured to couple the first plate to the first digit line, and also includes a second digit line and a second selection component configured to couple the second plate to the second digit line.
69 Citations
27 Claims
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1. An apparatus, comprising:
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a ferroelectric memory cell including first and second selection components; first and second digit lines coupled to the first and second selection components, respectively; a first access line coupled to a gate of the first selection component; a second access line coupled to a gate of the second selection component; a sense component including a first sense node and a second sense node, the sense component configured to sense a voltage difference between the first and second sense nodes, amplify the voltage difference, and latch the voltage difference; a first switch coupled to the first digit line and the first sense node, the first switch configured to selectively couple the first digit line to the first sense node responsive to a first control signal; a second switch coupled to the second digit line and the second sense node, the second swatch coupled to selectively couple the second digit line to the second sense node responsive to a second control signal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An apparatus comprising:
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a plurality of memory cells arranged in rows and columns, each memory cell including first and second selection components, and further including a ferroelectric capacitor coupled between the first and second selection components; a plurality of pairs of word lines, each pair of word lines of the plurality of pairs of word lines coupled to a respective row of memory cells, wherein each pair of word lines coupled to a respective gate of a respective first selection component, and wherein each pair of word lines coupled to a respective gate of a respective second selection component; a plurality of pairs of digit lines, each pair of digit lines of the plurality of pairs of digit lines coupled to a respective column of memory cells; a row decoder coupled to the plurality of pairs of word lines and configured to activate a pair of word lines based on a row address; a column decoder coupled to the plurality of pairs of digit lines and configured to activate a pair of digit lines based on a column address; and sense components coupled to the plurality of pairs of digit lines and configured to determine the stored states of the memory cells of an activated row of memory cells. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A method, comprising:
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coupling a first plate of a memory capacitor to a first digit line; coupling a second plate of the memory capacitor to a second digit line; providing a read voltage to the first plate of the memory capacitor to cause a change in voltage at the second plate of the memory capacitor; sensing a voltage difference between a voltage at the second plate of the memory capacitor and a reference voltage; amplifying the voltage difference to provide an amplified voltage difference; applying the amplified voltage difference to the first and second plates of the memory capacitor over the first and second digit lines, respectively; decoupling the first plate of the memory capacitor from the first digit line; and decoupling the second plate of the memory capacitor from the second digit line. - View Dependent Claims (16, 17, 18, 19, 20)
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21. A method, comprising:
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driving a read voltage on a first digit line coupled to a first plate of a ferroelectric memory cell to cause a voltage change at a second plate of the ferroelectric memory cell, the voltage change at the second plate of the ferroelectric memory cell provided to a second sense node of a sense amplifier over a second digit line coupled to the second plate of the ferroelectric memory cell; providing a reference voltage to a first sense node of the sense amplifier; comparing the voltage at the second sense node of the sense amplifier to the voltage of the first sense node; driving the first and second sense nodes to complementary voltage levels based on the comparison; coupling the first sense node to the first digit line to provide the complementary voltage levels to the first and second plates of the ferroelectric memory cell over the first and second digit lines, respectively; and isolating the first and second plates from the first and second digit lines, respectively. - View Dependent Claims (22, 23, 24, 25, 26, 27)
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Specification