MOS device with island region
First Claim
1. A semiconductor device formed on a semiconductor substrate, comprising:
- an epitaxial layer overlaying the semiconductor substrate;
a drain formed on back of the semiconductor substrate;
a drain region that extends into the epitaxial layer;
an active region comprising;
a body disposed in the epitaxial layer;
a source embedded in the body;
a first gate trench extending into the epitaxial layer;
a gate disposed in the first gate trench;
an active region contact trench extending through the source and the body; and
an active region contact electrode disposed within the active region contact trench;
an island region under the active region contact trench and disconnected from the body, the island region having an opposite polarity as the epitaxial layer; and
a gate region comprising;
a second gate trench extending into the epitaxial layer;
a second gate disposed in the second gate trench; and
a gate contact trench formed within the second gate.
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Accused Products
Abstract
A semiconductor device formed on a semiconductor substrate, comprising: an epitaxial layer overlaying the semiconductor substrate; a drain formed on back of the semiconductor substrate; a drain region that extends into the epitaxial layer; an active region; and an island region under the contact trench and disconnected from the body, the island region having an opposite polarity as the epitaxial layer. The active region comprises: a body disposed in the epitaxial layer; a source embedded in the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; an active region contact trench extending through the source and the body; and an active region contact electrode disposed within the active region contact trench.
5 Citations
6 Claims
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1. A semiconductor device formed on a semiconductor substrate, comprising:
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an epitaxial layer overlaying the semiconductor substrate; a drain formed on back of the semiconductor substrate; a drain region that extends into the epitaxial layer; an active region comprising; a body disposed in the epitaxial layer; a source embedded in the body; a first gate trench extending into the epitaxial layer; a gate disposed in the first gate trench; an active region contact trench extending through the source and the body; and an active region contact electrode disposed within the active region contact trench; an island region under the active region contact trench and disconnected from the body, the island region having an opposite polarity as the epitaxial layer; and a gate region comprising; a second gate trench extending into the epitaxial layer; a second gate disposed in the second gate trench; and a gate contact trench formed within the second gate. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification