Light emitting diode structure with dielectric reflective layer

• US 10,074,777 B2
• Filed: 08/27/2014
• Issued: 09/11/2018
• Est. Priority Date: 08/27/2014
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Epistar Corporation (Ennostar, Inc.)
• Inventors: Yang, Cheng-Kuang, Feng, Hui-Ching, Hsu, Chien-Pin, Yu, Kuo-Hui, Pan, Shyi-Ming
• Primary Examiner(s): Parendo, Kevin
• Application Number:
  US14/469,593
• Publication Number:
  US 20160064617A1
• Time in Patent Office: 1,476 Days
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting diode (LED) structure including a stacked semiconductor layer, a contact layer and a dielectric reflective layer is provided. The stacked semiconductor layer includes a first type doped layer, a second type doped layer and an active layer disposed between the first type doped layer and the second type doped layer, wherein the first type doped layer, the active layer and the second type doped layer are penetrated by a plurality of recesses. The contact layer is disposed on the second type doped layer. The dielectric reflective layer is disposed on the contact layer and extended into the recesses to connect the contact layer and the first type doped layer with a coverage rate equal to or less than 60% from a top view of the LED structure.

Claims

1. A light emitting diode (LED) structure, comprising:

a stacked semiconductor layer comprising;

a first type doped layer;

a second type doped layer; and

an active layer disposed between the first type doped layer and the second type doped layer;

a plurality of recesses penetrating the second type doped layer and the active layer, wherein a bottom of each of the plurality of recesses exposes the first type doped layer;

a contact layer disposed on the second type doped layer;

a dielectric reflective layer covering the contact layer and the first type doped layer by extending into the recesses;

a plurality of caves with corresponding openings formed on the second type doped layer and on the contact layer, wherein the plurality of recesses are arranged in a first line in a top view of the light emitting diode (LED) structure, the plurality of caves are arranged in a second line in the top view of the light emitting diode (LED) structure and the first line is parallel to the second line in the top view of the light emitting diode (LED) structure;

a patterned mirror layer formed on the contact layer, comprising one part of the patterned mirror layer connecting to the plurality of caves, and most part of the patterned mirror layer not connecting to the plurality of caves, wherein the most part of the patterned mirror layer are covered by the dielectric reflective layer;

a conductive layer on the dielectric reflective layer and electrically connected to the first doped layer through the plurality of recesses; and

an electrode layer disposed on the dielectric reflective layer, wherein the electrode layer comprises a first electrode region and a second electrode region, wherein the first electrode region or the second electrode region comprises a top surface comprising a concave portion corresponding to the recesses.

2. The LED structure as claimed in claim 1, wherein the first electrode region and the second electrode region are separated by a groove, and one of the plurality of recesses is disposed on the groove.

3. The LED structure as claimed in claim 2, wherein the second electrode region of the electrode layer electrically connects to the contact layer through the plurality of caves.

4. The LED structure as claimed in claim 2, wherein the conductive layer is disposed between the dielectric reflective layer and the electrode layer, and the first electrode region of the electrode layer connects to a part of the conductive layer.

5. The LED structure as claimed in claim 2, further comprising an insulation layer disposed between the second electrode region of the electrode layer and the conductive layer.

6. The LED structure as claimed in claim 5, wherein the insulation layer is further disposed between the first electrode region of the electrode layer and the conductive layer, where the first electrode region of the electrode layer does not connect to the conductive layer.

7. The LED structure as claimed in claim 2, wherein one of the plurality of caves where the second electrode region of the electrode layer is electrically connected to the contact layer and one of the recesses where the conductive layer is electrically connected to the first type doped layer are adjacently disposed.

8. The LED structure as claimed in claim 1, wherein the one part of the patterned mirror layer connecting to the plurality of caves comprises a width larger than a width of one of the most part of the patterned mirror layer.

9. The LED structure as claimed in claim 1, wherein the dielectric reflective layer covers a total top surface of the most part of the patterned mirror layer.

10. The LED structure as claimed in claim 1, further comprising a substrate with a surface where the stacked semiconductor layer disposed on, wherein a part of the surface of the substrate is exposed from the stacked semiconductor layer to form an exposed area, and the dielectric reflective layer further covers at least a part of the exposed area of the substrate.

11. The LED structure as claimed in claim 1, wherein the dielectric reflective layer comprises multiple layers of alternating materials with varying refractive index.

12. The LED structure as claimed in claim 11, wherein the dielectric reflective layer is a Distributed Bragg Reflector (DBR), and

wherein the dielectric reflective layer comprises a high refractive index material selected from a group consisting of TiO₂, ZnSe, Si₃N₄, Nb₂O₅, and Ta₂O₅ and a low refractive index material selected from a group consisted of SiO₂, MgF₂, and CaF₂.

13. The LED structure as claimed in claim 1, wherein the plurality of caves comprises multiple stripe-shaped caves, and extensional directions of the multiple stripe-shaped caves are parallel to each other.

14. The LED structure as claimed in claim 1, wherein the plurality of caves comprises multiple circular-shaped caves arranged in an array.

15. The LED structure as claimed in claim 1, wherein a material of the contact layer is selected from indium tin oxide (ITO), cerium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO) indium zinc oxide (IZO), zinc oxide (ZnO), cadmium tin oxide, ZnGa2O4, SnO2:

Sb, Ga2O3;

Sn, AgInO2;

Sn, In2O3;

Zn, CuAlO2, LaCuOS, NiO, or CuGaO2, SrCu2O2, Ag, Au, Al, Ti, Pd, graphene or any combinations thereof.

16. The LED structure as claimed in claim 1, wherein at least some of the plurality of caves where the electrode layer is electrically connected to the contact layer and at least some of the plurality of recesses where the conductive layer is connected to the first type doped layer are alternately disposed.