Composite having semiconductor structures including a nanocrystalline core and shell
First Claim
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1. A semiconductor structure, comprising:
- an anisotropic nanocrystalline core comprising a first semiconductor material;
an anisotropic nanocrystalline shell comprising a second, different, semiconductor material completely surrounding the anisotropic nanocrystalline core, wherein the nanocrystalline shell has a center, wherein the nanocrystalline shell extends in a first direction along a first axis and the anisotropic nanocrystalline core is disposed off-center with respect to the anisotropic nanocrystalline shell in the first direction along the first axis, wherein the nanocrystalline shell extends in a second direction along a second axis orthogonal to the first axis and the anisotropic nanocrystalline core is further disposed off-center with respect to the anisotropic nanocrystalline shell in the second direction along the second axis, wherein the nanocrystalline shell is longer in the first direction along the first axis than in the second direction along the second axis, and wherein the anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot; and
an insulator layer encapsulating the anisotropic nanocrystalline shell and anisotropic nanocrystalline core.
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Abstract
Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.
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Citations
18 Claims
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1. A semiconductor structure, comprising:
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an anisotropic nanocrystalline core comprising a first semiconductor material; an anisotropic nanocrystalline shell comprising a second, different, semiconductor material completely surrounding the anisotropic nanocrystalline core, wherein the nanocrystalline shell has a center, wherein the nanocrystalline shell extends in a first direction along a first axis and the anisotropic nanocrystalline core is disposed off-center with respect to the anisotropic nanocrystalline shell in the first direction along the first axis, wherein the nanocrystalline shell extends in a second direction along a second axis orthogonal to the first axis and the anisotropic nanocrystalline core is further disposed off-center with respect to the anisotropic nanocrystalline shell in the second direction along the second axis, wherein the nanocrystalline shell is longer in the first direction along the first axis than in the second direction along the second axis, and wherein the anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot; and an insulator layer encapsulating the anisotropic nanocrystalline shell and anisotropic nanocrystalline core. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification