Composite having semiconductor structures including a nanocrystalline core and shell

• US 10,074,780 B2
• Filed: 01/22/2016
• Issued: 09/11/2018
• Est. Priority Date: 11/09/2011
• Status: Active Grant

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Kurtin, Juanita, Theobald, Brian, Carillo, Matthew J., Park, Oun-Ho, Masson, Georgeta, Hughes, Steven M.
• Primary Examiner(s): Le, Thao X
• Assistant Examiner(s): Swan, Gardner W
• Application Number:
  US15/004,478
• Publication Number:
  US 20160141463A1
• Time in Patent Office: 963 Days
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C01B 19/007 Tellurides or selenides of metals C01B19/002 takes precedence
• CPC Class Codes: C01P 2002/84 by UV- or VIS- data
• CPC Class Codes: C01P 2004/04 obtained by TEM, STEM, STM or AFM
• CPC Class Codes: C01P 2004/10 extending in one dimension, e.g. needle-like
• CPC Class Codes: C01P 2004/54 Particles characterised by their aspect ratio, i.e. the ratio of sizes in the longest to the shortest dimension
• CPC Class Codes: C01P 2004/64 Nanometer sized, i.e. from 1-100 nanometer
• CPC Class Codes: C01P 2004/80 Particles consisting of a mixture of two or more inorganic phases
• CPC Class Codes: C09K 11/02 Use of particular materials as binders, particle coatings or suspension media therefor
• CPC Class Codes: C09K 11/025 non-luminescent particle coatings or suspension media
• CPC Class Codes: C09K 11/565 with zinc cadmium
• CPC Class Codes: C09K 11/883 with zinc or cadmium
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/502 : Wavelength conversion materials
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin
• CPC Class Codes: Y10S 977/744 : having atoms interior to the carbon cage
• CPC Class Codes: Y10S 977/774 : Exhibiting three-dimensional carrier confinement, e.g. quantum dots
• CPC Class Codes: Y10S 977/824 : Group II-VI nonoxide compounds, e.g. CdxMnyTe
• CPC Class Codes: Y10S 977/89 : Deposition of materials, e.g. coating, cvd, or ald
• CPC Class Codes: Y10S 977/95 : Electromagnetic energy

Abstract

Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.

Claims

1. A semiconductor structure, comprising:

an anisotropic nanocrystalline core comprising a first semiconductor material;

an anisotropic nanocrystalline shell comprising a second, different, semiconductor material completely surrounding the anisotropic nanocrystalline core, wherein the nanocrystalline shell has a center, wherein the nanocrystalline shell extends in a first direction along a first axis and the anisotropic nanocrystalline core is disposed off-center with respect to the anisotropic nanocrystalline shell in the first direction along the first axis, wherein the nanocrystalline shell extends in a second direction along a second axis orthogonal to the first axis and the anisotropic nanocrystalline core is further disposed off-center with respect to the anisotropic nanocrystalline shell in the second direction along the second axis, wherein the nanocrystalline shell is longer in the first direction along the first axis than in the second direction along the second axis, and wherein the anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot; and

an insulator layer encapsulating the anisotropic nanocrystalline shell and anisotropic nanocrystalline core.

2. The semiconductor structure of claim 1, wherein the insulator layer is bonded directly to the anisotropic nanocrystalline shell.

3. The semiconductor structure of claim 2, wherein the insulator layer passivates an outermost surface of the anisotropic nanocrystalline shell.

4. The semiconductor structure of claim 1, wherein the insulator layer provides a barrier for the anisotropic nanocrystalline shell and anisotropic nanocrystalline core impermeable to an environment outside of the insulator layer.

5. The semiconductor structure of claim 1, wherein the insulator layer encapsulates only a single anisotropic nanocrystalline shell/anisotropic nanocrystalline core pairing.

6. The semiconductor structure of claim 1, wherein the insulator layer comprises a layer of material selected from the group consisting of silica (SiO_x), titanium oxide (TiO_x), zirconium oxide (ZrO_x) and alumina (AlO_x).

7. The semiconductor structure of claim 6, wherein the insulator layer is a layer of silica having a thickness approximately in the range of 3-30 nanometers.

8. The semiconductor structure of claim 1, wherein an outer surface of the insulator layer is ligand-free.

9. The semiconductor structure of claim 1, wherein an outer surface of the insulator layer is ligand-functionalized.

10. The semiconductor structure of claim 1, wherein the nanocrystalline core has a diameter approximately in the range of 2-5 nanometers, the first axis has a length approximately in the range of 5-40 nanometers, and the second axis has a length approximately in the range of 1-5 nanometers greater than the diameter of the nanocrystalline core, and wherein the insulator layer has a thickness approximately in the range of 1-20 nanometers along an axis co-axial with the first axis and has a thickness approximately in the range of 3-30 nanometers along an axis co-axial with the second axis.

11. The semiconductor structure of claim 1, further comprising:

a nanocrystalline outer shell at least partially surrounding the anisotropic nanocrystalline shell, between the anisotropic nanocrystalline shell and the insulator layer, the nanocrystalline outer shell comprising a third semiconductor material different from the first and second semiconductor materials.

12. The semiconductor structure of claim 1, wherein the quantum dot has a photoluminescence quantum yield (PLQY) of at least 90%.

13. The semiconductor structure of claim 1, wherein emission from the quantum dot is mostly, or entirely, from the anisotropic nanocrystalline core.

14. The semiconductor structure of claim 13, wherein emission from the anisotropic nanocrystalline core is at least approximately 75% of the total emission from the quantum dot.

15. The semiconductor structure of claim 1, wherein an absorption spectrum and an emission spectrum of the quantum dot are essentially non-overlapping.

16. The semiconductor structure of claim 1, wherein an absorbance ratio of the quantum dot for absorbance at 400 nanometers versus absorbance at an exciton peak for the quantum dot is approximately in the range of 5-35.

17. The semiconductor structure of claim 1, wherein the quantum dot is a down-converting quantum dot.

18. The semiconductor structure of claim 1, wherein the insulator layer is an amorphous layer.