Semiconductor device including stacked oxide semiconductor material

• US 10,079,310 B2
• Filed: 10/13/2016
• Issued: 09/18/2018
• Est. Priority Date: 11/28/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Chambliss, Alonzo
• Application Number:
  US15/292,479
• Publication Number:
  US 20170033231A1
• Time in Patent Office: 705 Days
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02472 Oxides
• CPC Class Codes: H01L 21/02483 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02592 amorphous
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: Y10T 156/10 Methods of surface bonding and/or assembly therefor
• CPC Class Codes: Y10T 428/24174 : including sheet or component perpendicular to plane of web or sheet

Abstract

One embodiment is a method for manufacturing a stacked oxide material, including the steps of forming an oxide component over a base component; forming a first oxide crystal component which grows from a surface toward an inside of the oxide component by heat treatment, and leaving an amorphous component just above a surface of the base component; and stacking a second oxide crystal component over the first oxide crystal component. In particular, the first oxide crystal component and the second oxide crystal component have common c-axes. Same-axis (axial) growth in the case of homo-crystal growth or hetero-crystal growth is caused.

Claims

1. A semiconductor device comprising:

a stacked oxide semiconductor material comprising;

a first oxide semiconductor component comprising a first oxide crystal component whose crystal growth proceeded from a surface toward an inside of the first oxide crystal component, over a base component; and

a second oxide semiconductor component comprising a second oxide crystal component over the first oxide crystal component wherein the oxide component is formed by heat treatment of the first oxide semiconductor component,

wherein an oxide component is positioned between the base component and the first oxide crystal component.

2. The semiconductor device according to claim 1, wherein the base component includes an insulating surface, an oxide surface, a nitride surface, or a metal surface.

3. The semiconductor device according to claim 1, wherein the oxide component includes an amorphous region.

4. A semiconductor device comprising:

a stacked oxide semiconductor material comprising;

a first oxide semiconductor component comprising a first oxide crystal component, over a base component; and

a second oxide semiconductor component comprising a second oxide crystal component over and in contact with the first oxide crystal component wherein the oxide component is formed by heat treatment of the first oxide semiconductor component,

wherein an oxide component is positioned between the base component and the first oxide crystal component,

wherein a crystal structure of the second oxide crystal component is the same as the first oxide crystal component, and

wherein at least part of the second oxide crystal component grows above a surface of the first oxide crystal component.

5. The semiconductor device according to claim 4, wherein the first oxide crystal component and the second oxide crystal component are formed using materials including the same components.

6. The semiconductor device according to claim 4, wherein the first oxide crystal component and the second oxide crystal component have the same electron affinity.

7. The semiconductor device according to claim 4, wherein the first oxide crystal component and the second oxide crystal component are formed using different materials.