Optoelectronic semiconductor chip

• US 10,079,329 B2
• Filed: 10/20/2015
• Issued: 09/18/2018
• Est. Priority Date: 10/29/2014
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Kopp, Fabian, Eichinger, Christian, Perzlmaier, Korbinian
• Primary Examiner(s): Yushin, Nikolay
• Application Number:
  US15/522,783
• Publication Number:
  US 20170324005A1
• Time in Patent Office: 1,064 Days
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/325 characterised by the doping materials
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

According to the present disclosure, optoelectronic semiconductor chip includes at least one n-doped semiconductor layer, at least one p-doped semiconductor layer and one active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer. The p-doped semiconductor layer is electrically contacted by means of a first metallic connection layer, and a reflection-enhancing dielectric layer sequence is arranged between the p-doped semiconductor layer and the first connection layer, which dielectric layer sequence includes a plurality of dielectric layers with different refractive indices.

Claims

1. Optoelectronic semiconductor chip, comprising at least one n-doped semiconductor layer, at least one p-doped semiconductor layer and one active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer,

wherein the p-doped semiconductor layer is electrically contacted by means of a first metallic connection layer, and wherein a reflection-enhancing dielectric layer sequence is arranged between the p-doped semiconductor layer and the first connection layer, which reflection-enhancing dielectric layer sequence comprises a plurality of dielectric layers with different refractive indices,

wherein the reflection-enhancing dielectric layer sequence comprises at least three layers, which comprise at least one first dielectric layer with a thickness of d1 of a first dielectric material with a refractive index n1 and at least one second dielectric layer with a thickness of d2 of a second dielectric material with a refractive index n2>

n1, and

wherein the active layer is suitable for emitting radiation with a dominant wavelength λ

, wherein 0.01λ

/4≤

n1*d1≤

10λ

/4 applies for the thickness d1 of the at least one first dielectric layer and 0.01λ

/4≤

n2*d2≤

10 λ

/4 applies for the thickness d2 of the at least one second dielectric layer.

2. Optoelectronic semiconductor chip according to claim 1, wherein a transparent electrically conductive layer is arranged between the p-doped semiconductor layer and the first connection layer, wherein the transparent electrically conductive layer is arranged at least in places between the reflection-enhancing dielectric layer sequence and the first connection layer.

3. Optoelectronic semiconductor chip according to claim 1, wherein 0.7λ

/4≤

n1*d1≤

1.3λ

/4 applies for the thickness d1 of the at least one first dielectric layer and 0.7λ

/4≤

n2*d2≤

1.3λ

/4 applies for the thickness d2 of the at least one second dielectric layer.

4. Optoelectronic semiconductor chip according to claim 1, wherein the reflection-enhancing dielectric layer sequence comprises at least one of the materials Al₂O₃, Ta₂O₅, ZrO₂, ZnO, SiN_x, SiO_xN_y, SiO₂, TiO₂, ZrO₂, HfO₂, Nd₂O₅ or MgF₂.

5. Optoelectronic semiconductor chip according to claim 1, wherein the first connection layer encases the reflection-enhancing dielectric layer sequence.

6. Optoelectronic semiconductor chip according to claim 1, wherein the at least one n-doped semiconductor layer, the at least one p-doped semiconductor layer and the active layer each comprise a nitride compound semiconductor material.

7. Optoelectronic semiconductor chip according to claim 1, wherein a transparent electrically conductive interlayer is arranged between the p-doped semiconductor layer and the reflection-enhancing dielectric layer sequence.

8. Optoelectronic semiconductor chip according to claim 7, wherein the transparent electrically conductive interlayer covers an entire surface of the p-doped semiconductor layer.

9. Optoelectronic semiconductor chip according to claim 1, wherein the reflection-enhancing dielectric layer sequence comprises a plurality of pairs of layers, which each comprise a first dielectric layer of a first dielectric material with a refractive index n1 and at least one second dielectric layer of a second dielectric material with a refractive index n2>

n1.

10. Optoelectronic semiconductor chip according to claim 9, wherein the active layer is suitable for emitting radiation with a dominant wavelength λ

, wherein 0.01λ

/4≤

n1*d1≤

10λ

/4 applies for the thickness d1 of the at least one first dielectric layer and 0.01λ

/4≤

n2*d2≤

10λ

/4 applies for the thickness d2 of the at least one second dielectric layer.

11. Optoelectronic semiconductor chip according to claim 1, wherein the at least one n-doped semiconductor layer is electrically contacted by means of a second metallic connection layer.

12. Optoelectronic semiconductor chip according to claim 11, wherein at least one second transparent electrically conductive layer is arranged between the n-doped semiconductor layer and the second metallic connection layer.

13. Optoelectronic semiconductor chip according to claim 11, wherein the first metallic connection layer and/or the second metallic connection layer comprise at least one of the metals Au, Ag, Ti, Pt, Pd, Cu, Ni, In, Rh, Cr, Al or W.

14. Optoelectronic semiconductor chip according to claim 11, wherein a second reflection-enhancing dielectric layer sequence is arranged between the n-doped semiconductor layer and the second metallic connection layer, wherein the second reflection-enhancing dielectric layer sequence comprises a plurality of dielectric layers with different refractive indices.

15. Optoelectronic semiconductor chip according to claim 14, wherein the second connection layer encases the second reflection-enhancing dielectric layer sequence.

16. Optoelectronic semiconductor chip, comprising at least one n-doped semiconductor layer, at least one p-doped semiconductor layer and one active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer,

wherein the p-doped semiconductor layer is electrically contacted by means of a first metallic connection layer, and wherein a reflection-enhancing dielectric layer sequence is arranged between the p-doped semiconductor layer and the first connection layer, which reflection-enhancing dielectric layer sequence comprises a plurality of dielectric layers with different refractive indices,

wherein a transparent electrically conductive interlayer is arranged between the p-doped semiconductor layer and the reflection-enhancing dielectric layer sequence,

wherein electrical contact between the first connection layer and the transparent electrically conductive interlayer is produced in that the first connection layer encases the reflection-enhancing dielectric layer sequence, and wherein the n-doped semiconductor layer is electrically contacted in that the second connection layer in part directly adjoins the n-doped semiconductor layer,

wherein the reflection-enhancing dielectric layer sequence comprises at least three layers, which comprise at least one first dielectric layer with a thickness d1 of a first dielectric material with a refractive index n1 and at least one second dielectric layer with a thickness d2 of a second dielectric material with a refractive index n2>

n1, and

wherein the active layer is suitable for emitting radiation with a dominant wavelength λ

, wherein 0.01λ

/4≤

n1*d1≤

10λ

/4 applies for the thickness d1 of the at least one first dielectric layer and 0.01λ

/4≤

n2*d2≤

10λ

/4 applies for the thickness d2 of the at least one second dielectric layer.

17. Optoelectronic semiconductor chip, comprising at least one n-doped semiconductor layer, at least one p-doped semiconductor layer and one active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer,

wherein the p-doped semiconductor layer is electrically contacted by means of a first metallic connection layer, and wherein a reflection-enhancing dielectric layer sequence is arranged between the p-doped semiconductor layer and the first connection layer, which reflection-enhancing dielectric layer sequence comprises a plurality of dielectric layers with different refractive indices,

wherein a transparent electrically conductive layer is arranged between the first connection layer and the reflection-enhancing dielectric layer sequence, and a transparent electrically conductive interlayer is arranged between the p-doped semiconductor layer and the reflection-enhancing dielectric layer sequence,

wherein the reflection-enhancing dielectric layer sequence comprises at least three layers, which comprise at least one first dielectric layer with a thickness d1 of a first dielectric material with a refractive index n1 and at least one second dielectric layer with a thickness of d2 of a second dielectric material with a refractive index n2>

n1, and

wherein the active layer is suitable for emitting radiation with a dominant wavelength λ

, wherein 0.01 λ

/4≤

n1*d1≤

10λ

/4 applies for the thickness d1 of the at least one first dielectric layer and 0.01λ

/4≤

n2*d2≤

10λ

/4 applies for the thickness d2 of the at least one second dielectric layer.