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Vertically aligned carbon nanotube trapezoid FIN structure

  • US 10,079,354 B2
  • Filed: 04/05/2017
  • Issued: 09/18/2018
  • Est. Priority Date: 03/31/2015
  • Status: Active Grant
First Claim
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1. A method of making a transistor device, the method comprising:

  • forming an array of fin structures, the array of fin structures being arranged on a substrate and each having a pair of layers, the pair of layers comprising a first isoelectric point material having a first isoelectric point and a second isoelectric point material having a second isoelectric point that is different than the first isoelectric point;

    wrapping a gate around carbon nanotubes (CNTs) between the fin structures to suspend the CNTs in the gate, the CNTs contacting a side surface of the second isoelectric point material in the fin structures; and

    forming source and drain contacts over the fin structures;

    wherein the CNTs are arranged in a non-vertical tapered array within the gate.

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