Gas sensor

• US 10,082,464 B2
• Filed: 09/26/2014
• Issued: 09/25/2018
• Est. Priority Date: 09/27/2013
• Status: Active Grant

• Current Assignee: Asahi Kasei Microdevices Corporation (Asahi Kasei Corporation)
• Original Assignee: Asahi Kasei Microdevices Corporation (Asahi Kasei Corporation)
• Inventors: Camargo, Edson Gomes, Takehara, Satoshi
• Primary Examiner(s): Ton, Tri
• Assistant Examiner(s): BRYANT, REBECCA CAROLE
• Application Number:
  US15/022,976
• Publication Number:
  US 20160231244A1
• Time in Patent Office: 1,460 Days
• CPC Class Codes: G01N 21/0303 Optical path conditioning in cuvettes, e.g. windows; adapted optical elements or systems; path modifying or adjustment G01N21/031 - G01N21/15 take precedence
• CPC Class Codes: G01N 21/031 Multipass arrangements
• CPC Class Codes: G01N 21/3504 for analysing gases, e.g. multi-gas analysis
• CPC Class Codes: G01N 21/61 Non-dispersive gas analysers G01N21/3504 takes precedence
• CPC Class Codes: G01N 2201/062 LED's
• CPC Class Codes: G01N 2201/068 Optics, miscellaneous
• CPC Class Codes: G01N 2201/12 Circuits of general importance; Signal processing
• CPC Class Codes: H01L 31/0304 including, apart from doping materials or other impurities, only AIIIBV compounds
• CPC Class Codes: H01L 31/167 the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers

Abstract

A small-size reliable gas sensor that can reduce a measurement error can be provided. The gas sensor includes: a first light source (20); a first sensor unit (31) and a second sensor unit (32) disposed to receive light output from the first light source (20); a first substrate (41) having a first principal surface (411) on which the first light source (20) and the first sensor unit (31) are provided; and a second substrate (42) having a first principal surface (422) on which the second sensor unit (32) is provided. The first sensor unit (31) is disposed at a location where light output from the first light source (20) and reflected on the second principal surface (412) strikes the first principal surface (422) of the first substrate (41).

Claims

1. A gas sensor comprising:

a first light source;

a first sensor unit and a second sensor unit disposed to receive light output from the first light source;

a first substrate having a first principal surface and a second principal surface opposite to the first principal surface, the first light source and the first sensor unit being provided on the first principal surface of the first substrate; and

a second substrate having a first principal surface and a second principal surface opposite to the first principal surface, the second sensor unit being provided on the first principal surface of the second substrate, wherein

the first sensor unit is disposed at a location where a first portion of light output from the first light source passes through the first substrate, is reflected off the second principal surface of the first substrate, and is returned through the first substrate to directly strike the first sensor unit,

the second sensor unit is disposed at a location where a second portion of light output from the first light source radiates from the second principal surface of the first substrate, passes through the inside of the second substrate, and strikes the second sensor unit, and

the first substrate and the second substrate are two individual parts and physically separate from each other.

2. The gas sensor according to claim 1, further comprising

a computation unit configured to receive an output signal from the first sensor unit and an output signal from the second sensor unit.

3. The gas sensor according to claim 1, wherein

the first sensor unit and the second sensor unit have an identical temperature characteristic, wherein a ratio between coefficients of change in output of the first sensor unit to the second sensor unit per 1°

C. is greater than or equal to 0.8 and less than or equal to 1.2°

C.

4. The gas sensor according to claim 1, wherein

the first substrate and the second substrate are disposed adjacent to each other with side faces thereof facing each other, and

the gas sensor further comprises a light-blocking portion disposed between the first substrate and the second substrate.

5. The gas sensor according to claim 1, further comprising:

a gas cell; and

a light reflection unit disposed away from the first substrate and the second substrate in the gas cell and configured to reflect light emitted from the second principal surface of the first substrate toward the second sensor unit.

6. The gas sensor according to claim 4, further comprising:

a control layer disposed on the second principal surface of the first substrate, and configured to control an amount of light output from the first light source and scattered in the first substrate and an amount and a radiation angle of light output from the first light source and radiated from the second principal surface of the first substrate to a space in the gas cell.

7. The gas sensor according to claim 1, further comprising

a light reflection layer disposed on the second principal surface of the first substrate and configured to reflect light output from the first light source toward the first sensor unit.

8. The gas sensor according to claim 1, wherein

the first sensor unit and the second sensor unit are made of an identical material and have an identical laminated structure.

9. The gas sensor according to claim 8, wherein

the laminated structure is a diode structure including at least two types of layers of a p-type semiconductor and an n-type semiconductor and includes indium or antimony.

10. The gas sensor according to claim 1, further comprising:

an optical filter disposed on an optical path along which light emitted from the second principal surface of the first substrate strikes the second sensor unit, the optical filter being transmissive only to a specific wavelength band.

11. The gas sensor according to claim 1, wherein

each of the first sensor unit and the second sensor unit includes a plurality of light-receiving portions having an identical structure, and

the number of light-receiving portions of the first sensor unit is different from that of the second sensor unit.

12. The gas sensor according to claim 1, wherein

the first substrate and the second substrate are made of an identical material.

13. The gas sensor according to claim 1, further comprising:

a second light source disposed on the first principal surface of the second substrate, wherein

the second sensor unit is disposed at a location where a third portion of light output from the second light source passes through the second substrate and is reflected off the second principal surface, to directly strike the second sensor unit.

14. The gas sensor according to claim 13, further comprising:

a light reception/emission control unit configured to supply electric power to the first light source and the second light source and to receive an output signal from the first sensor unit and an output signal from the second sensor unit.

15. The gas sensor according to claim 14, wherein

while the light reception/emission control unit supplies electric power to a light-emitting portion of one of the first light source or the second light source, the light reception/emission control unit does not supply electric power to a light-emitting portion of the other.

16. The gas sensor according to claim 14, wherein

the light reception/emission control unit supplies an identical level of electric power to the first light source and the second light source.

17. The gas sensor according to claim 14, wherein

the light reception/emission control unit controls electric power to be supplied to the first light source and electric power to be supplied to the second light source in such a manner that temperatures of the first sensor unit and the second sensor unit become identical.

18. The gas sensor according to claim 17, wherein

the light reception/emission control unit includes

a first temperature measuring unit configured to measure a temperature of the first sensor unit, and

a second temperature measuring unit configured to measure a temperature of the second sensor unit.

19. The gas sensor according to claim 17, wherein

the light reception/emission control unit,

calculates a temperature of the first sensor unit based on a resistance value of the first sensor unit, and

calculates a temperature of the second sensor unit based on a resistance value of the second sensor unit.

20. The gas sensor according to claim 17, wherein

the light reception/emission control unit controls at least one selected from the group consisting of a width, an amplitude, and a duty ratio of a pulse of a current or a voltage of electric power to be supplied to the first light source and the second light source.

21. The gas sensor according to claim 17, wherein

the light reception/emission control unit drives the first light source at a frequency F1 and drives the second light source at a frequency F2, wherein F1 is not equal to F2.

22. The gas sensor according to claim 1, wherein the second substrate is different from the first substrate.

23. The gas sensor according to claim 1, wherein the first light source and the first sensor unit have compound semiconductor laminates directly formed on the principal surface of the first substrate respectively.

24. The gas sensor according to claim 2, wherein the computation unit is configured to calculate a ratio of an output signal from the first sensor unit and an output signal from the second sensor unit.

25. The gas sensor according to claim 4, wherein the light-blocking portion comprises an encapsulating resin.

26. The gas sensor according to claim 13, wherein the second light source and the second sensor unit have compound semiconductor laminates directly formed on the principal surface of the second substrate respectively.

28. The gas sensor according to claim 1, wherein the gas sensor is a nondispersive infrared (NDIR) gas sensor.

29. The gas sensor according to claim 28, wherein a concentration of the detection target gas is obtained from amount of infrared rays absorbed by the detection target gas.

30. The gas sensor according to claim 2, wherein the computation unit computes a concentration of a detection target gas based on the output signal from the first sensor unit and the output signal from the second sensor unit.

31. The gas sensor according to claim 30, wherein the output signal from the second sensor unit is a reference signal and the output signal from the first sensor unit is a signal that is changed in accordance with the detection target gas.

27. A gas sensor comprising:

a gas cell;

a first light source;

a first sensor unit and a second sensor unit disposed to receive light output from the first light source;

a first substrate having a first principal surface and a second principal surface opposite to the first principal surface, the first light source and the first sensor unit being provided on the first principal surface of the first substrate; and

a second substrate having a first principal surface and a second principal surface opposite to the first principal surface, the second sensor unit being provided on the first principal surface of the second substrate, wherein

the first sensor unit is disposed at a location where a portion of light output from the first light source passes through the first substrate, is reflected off the second principal surface of the first substrate and is returned through the first substrate to directly strike the first sensor unit from the first substrate, and

the second sensor unit is disposed at a location where light output from the first light source and then radiated from the second principal surface of the first substrate into the gas cell, passes through the inside of the second substrate, and strikes the second sensor unit, and

the first substrate and the second substrate are two individual parts and physically separate from each other.

35. The gas sensor according to claim 27, wherein the gas cell includes an inlet for introducing a detection target gas.

36. The gas sensor according to claim 27, wherein the gas sensor is a nondispersive infrared (NDIR) gas sensor.

37. The gas sensor according to claim 36, wherein a concentration of the detection target gas is obtained from amount of infrared rays absorbed by the detection target gas.

32. A gas sensor comprising:

a first light source;

a first sensor unit and a second sensor unit disposed to receive light output from the first light source;

a first substrate having a first principal surface and a second principal surface opposite to the first principal surface, the first light source and the first sensor unit being provided on the first principal surface of the first substrate; and

a second substrate having a first principal surface and a second principal surface opposite to the first principal surface, the second sensor unit being provided on the first principal surface of the second substrate, wherein

the first sensor unit is disposed at a location where a first portion of light output from the first light source passes through the first substrate, is reflected off the second principal surface of the first substrate, and is returned through the first substrate to directly strike the first sensor unit, and

the second sensor unit is disposed at a location where a second portion of light output from the first light source radiates from the second principal surface of the first substrate, passes through the inside of the second substrate, and strikes the second sensor unit.

33. The gas sensor according to claim 32, wherein the gas sensor is a nondispersive infrared (NDIR) gas sensor.

34. The gas sensor according to claim 33, wherein a concentration of the detection target gas is obtained from amount of infrared rays absorbed by the detection target gas.