Display device and electronic device including display device
First Claim
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1. A display device comprising:
- a scan line;
a signal line;
a wiring; and
a pixel region comprising;
a first transistor;
a second transistor; and
a light-emitting element,wherein the first transistor comprises a first oxide semiconductor layer and a first gate electrode over the first oxide semiconductor layer, the first gate electrode of the first transistor being electrically connected to the scan line,wherein the second transistor comprises a second gate electrode, a third gate electrode and a second oxide semiconductor layer, the second gate electrode being electrically connected to one of a source electrode and a drain electrode of the first transistor,wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to the signal line,wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to a first electrode of the light-emitting element,wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to the wiring,wherein a first voltage applied to the wiring is greater than a second voltage applied to a second electrode of the light-emitting element,wherein the second gate electrode overlaps with the third gate electrode with the second oxide semiconductor layer interposed therebetween,wherein the second gate electrode is over the third gate electrode, the source electrode and the drain electrode of the second transistor,wherein the first transistor is a top gate transistor,wherein the third gate electrode overlaps a whole area of the second oxide semiconductor layer overlap with the third gate electrode, andwherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises a crystalline region.
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Abstract
Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.
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Citations
22 Claims
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1. A display device comprising:
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a scan line; a signal line; a wiring; and a pixel region comprising; a first transistor; a second transistor; and a light-emitting element, wherein the first transistor comprises a first oxide semiconductor layer and a first gate electrode over the first oxide semiconductor layer, the first gate electrode of the first transistor being electrically connected to the scan line, wherein the second transistor comprises a second gate electrode, a third gate electrode and a second oxide semiconductor layer, the second gate electrode being electrically connected to one of a source electrode and a drain electrode of the first transistor, wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to the signal line, wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to a first electrode of the light-emitting element, wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to the wiring, wherein a first voltage applied to the wiring is greater than a second voltage applied to a second electrode of the light-emitting element, wherein the second gate electrode overlaps with the third gate electrode with the second oxide semiconductor layer interposed therebetween, wherein the second gate electrode is over the third gate electrode, the source electrode and the drain electrode of the second transistor, wherein the first transistor is a top gate transistor, wherein the third gate electrode overlaps a whole area of the second oxide semiconductor layer overlap with the third gate electrode, and wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises a crystalline region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A display device comprising:
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a first line; a second line; a third line; and a pixel region comprising; a first transistor; a second transistor; and a light-emitting element, wherein the first transistor comprises a first oxide semiconductor layer and a first gate electrode over the first oxide semiconductor layer, the first gate electrode of the first transistor being electrically connected to the first line, wherein the second transistor comprises a second gate electrode, a third gate electrode and a second oxide semiconductor layer, the second gate electrode being electrically connected to one of a source electrode and a drain electrode of the first transistor, wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to the second line, wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to a first electrode of the light-emitting element, wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to the third line, wherein the source electrode of the second transistor is in contact with a first region of the second oxide semiconductor layer, wherein the drain electrode of the second transistor is in contact with a second region of the second oxide semiconductor layer, wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium and zinc, wherein the second oxide semiconductor layer is over the third gate electrode, wherein the second gate electrode is over the second oxide semiconductor layer, wherein the second gate electrode overlaps with the third gate electrode, wherein the first region and the second region of the second oxide semiconductor layer overlap with the third gate electrode, and wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises a crystalline region. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei, Koyama, Jun, Miyake, Hiroyuki
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Primary Examiner(s)CERULLO, LILIANA P
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Application NumberUS14/881,500Publication NumberTime in Patent Office1,078 DaysField of SearchUS Class CurrentCPC Class CodesG09G 2330/021 Power management, e.g. powe...G09G 3/2003 Display of colours specific...G09G 3/3208 organic, e.g. using organic...G09G 3/3233 with pixel circuitry contro...H01L 27/1225 with semiconductor material...H01L 29/78609 for preventing leakage curr...H01L 29/7869 having a semiconductor body...H01L 29/78693 the semiconducting oxide be...H01L 29/78696 characterised by the struct...H10K 59/1213 the pixel elements being TFTsH10K 59/131 Interconnections, e.g. wiri...
