Light-emitting device

• US 10,083,945 B2
• Filed: 10/11/2017
• Issued: 09/25/2018
• Est. Priority Date: 08/15/2012
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Hsieh, Min Hsun
• Primary Examiner(s): Valentine, Jami M
• Application Number:
  US15/730,323
• Publication Number:
  US 20180033778A1
• Time in Patent Office: 349 Days
• Field of Search: 257 98, 257 99, 257 88
• CPC Class Codes: F21K 9/232 specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
• CPC Class Codes: F21V 3/00 Globes; Bowls; Cover glasses with refracting properties F21V5/00; with reflecting properties F21V7/00; characterised by cooling arrangements F21V29/506
• CPC Class Codes: F21W 2121/00 Use or application of lighting devices or systems for decorative purposes, not provided for in codes F21W2102/00 – F21W2107/00
• CPC Class Codes: F21Y 2107/00 Light sources with three-dimensionally disposed light-generating elements
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/24137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light-emitting device of an embodiment of the present application comprises light-emitting units; a transparent structure having cavities configured to accommodate at least one of the light-emitting units; and a conductive element connecting at least two of the light-emitting units.

Claims

1. A light-emitting device, comprising:

a substrate comprising a connecting structure;

a first optoelectronic unit arranged on the substrate and comprising;

a light-emitting structure which comprises a top surface, a first outmost side surface, a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer;

a first bonding pad which comprises a second outmost side surface, covers the top surface and the first outmost side surface, and electrically connects to the first semiconductor layer and the connecting structure; and

a passivation layer which comprises a third outmost side surface, locates on the first bonding pad, and covers the second outmost side surface; and

a supporting structure arranged under the first optoelectronic unit and covering the third outmost side surface.

2. The light-emitting device of claim 1, further comprising a reflective layer arranged between the supporting structure and the substrate.

3. The light-emitting device of claim 2, wherein the reflective layer comprises titanium dioxide or other white substance.

4. The light-emitting device of claim 1, wherein the supporting structure is pervious to light.

5. The light-emitting device of claim 1, wherein the substrate and the supporting structure are arranged on opposite sides of the first optoelectronic unit.

6. The light-emitting device of claim 1, wherein the supporting structure has a first width, the first optoelectronic unit has a second width, and the first width is larger than the second width.

7. The light-emitting device of claim 1, further comprising a light-transmissive cover formed in a U-shape, wherein the substrate is located in the light-transmissive cover.

8. The light-emitting device of claim 1, further comprising a second optoelectronic unit located on the substrate and electrically connected to the first optoelectronic unit.

9. The light-emitting device of claim 8, wherein the second optoelectronic unit and the first optoelectronic unit are connected with each other in series.

10. The light-emitting device of claim 1, wherein the first optoelectronic unit comprises a substrate, wherein the substrate and the first bonding pad are arranged on opposite sides of the light-emitting layer.

11. The light-emitting device of claim 1, wherein the supporting structure is directly contacted to the third outmost side surface.

12. The light-emitting device of claim 1, further comprising a first extension pad formed on the passivation layer and electrically connected to the first bonding pad.

13. The light-emitting device of claim 12, wherein the first extension pad is formed to expose at least one portion of the passivation layer.

14. The light-emitting device of claim 1, further comprising a second supporting structure covering the supporting structure.

15. The light-emitting device of claim 14, wherein the second supporting structure has a curved protrusion.

16. The light-emitting device of claim 15, wherein the curved protrusion is arranged on the first optoelectronic unit.

17. The light-emitting device of claim 1, further comprising a wavelength converting material covering the light-emitting structure and exposing the first bonding pad.

18. The light-emitting device of claim 17, wherein the wavelength converting material is arranged between the supporting structure and the first optoelectronic unit.

19. The light-emitting device of claim 1, wherein the first optoelectronic unit comprises a second passivation layer formed between the light-emitting structure and the first bonding pad.

20. The light-emitting device of claim 1, wherein the first optoelectronic unit comprises a second bonding pad electrically connected to the second semiconductor layer and covered by the passivation layer.