Semiconductor display device
First Claim
1. A semiconductor display device comprising:
- a pixel portion comprising;
a transistor comprising;
an active layer over a substrate; and
a gate electrode over the active layer with a gate insulating layer interposed therebetween;
a first inorganic insulating layer over and in direct contact with the gate electrode and the gate insulating layer;
an organic layer over the first inorganic insulating layer, the organic layer including a first opening part;
a contact hole in the gate insulating layer and the first inorganic insulating layer,wherein the first opening part and the contact hole overlap each other,wherein a wiring is over the organic layer, the wiring is in direct contact with the active layer through the first opening part and the contact hole,wherein the wiring includes a first layer containing titanium, a second layer containing aluminum, and a third layer containing titanium,wherein the second layer is between the first layer and the third layer,wherein a thickness of the second layer is higher than each of a thickness of the first layer and a thickness of the third layer,wherein the first inorganic insulating layer contains silicon and nitrogen, andwherein a curvature radius of a part of a surface of the organic layer becomes longer continuously as the organic layer separates from the first opening part.
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Abstract
It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.
285 Citations
12 Claims
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1. A semiconductor display device comprising:
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a pixel portion comprising; a transistor comprising; an active layer over a substrate; and a gate electrode over the active layer with a gate insulating layer interposed therebetween; a first inorganic insulating layer over and in direct contact with the gate electrode and the gate insulating layer; an organic layer over the first inorganic insulating layer, the organic layer including a first opening part; a contact hole in the gate insulating layer and the first inorganic insulating layer, wherein the first opening part and the contact hole overlap each other, wherein a wiring is over the organic layer, the wiring is in direct contact with the active layer through the first opening part and the contact hole, wherein the wiring includes a first layer containing titanium, a second layer containing aluminum, and a third layer containing titanium, wherein the second layer is between the first layer and the third layer, wherein a thickness of the second layer is higher than each of a thickness of the first layer and a thickness of the third layer, wherein the first inorganic insulating layer contains silicon and nitrogen, and wherein a curvature radius of a part of a surface of the organic layer becomes longer continuously as the organic layer separates from the first opening part. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor display device comprising:
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a pixel portion comprising; a transistor comprising; an active layer over a substrate; and a gate electrode over the active layer with a gate insulating layer interposed therebetween; a first inorganic insulating layer over and in direct contact with the gate electrode and the gate insulating layer; an organic layer over the first inorganic insulating layer, the organic layer including a first opening part; a contact hole in the gate insulating layer and the first inorganic insulating layer, wherein the first opening part and the contact hole overlap each other, wherein a wiring is over the organic layer, the wiring is in direct contact with the active layer through the first opening part and the contact hole, wherein the wiring includes a first layer containing titanium, a second layer containing aluminum, and a third layer containing titanium, wherein the second layer is between the first layer and the third layer, wherein a thickness of the second layer is higher than each of a thickness of the first layer and a thickness of the third layer, wherein the first inorganic insulating layer contains silicon and nitrogen, and wherein a sectional shape of a part of a surface of the organic layer at an end of the first opening part draws a parabola having a principal axis within a surface parallel with the substrate. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification