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Transparent conducting oxide for photovoltaic devices

  • US 10,084,107 B2
  • Filed: 11/30/2015
  • Issued: 09/25/2018
  • Est. Priority Date: 06/09/2010
  • Status: Active Grant
First Claim
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1. A photovoltaic structure, comprising:

  • a Si base layer;

    a p-type doped amorphous Si layer positioned on a first side of the Si base layer;

    an n-type doped semiconductor layer positioned on a second side of the Si base layer;

    a first transparent-conductive-oxide layer positioned on and in direct contact with the p-type doped amorphous Si layer, wherein the first transparent-conductive-oxide layer has a work function that is greater than 5.7 eV and less than to 6.1 eV, thereby reducing potential barriers for carriers at an interface between the p-type doped amorphous Si layer and the first transparent-conductive-oxide layer; and

    a second transparent-conductive-oxide layer positioned on and in direct contact with the n-type doped semiconductor layer, wherein the second transparent-conductive-oxide layer has a work function that is lower than the work function of the first transparent-conductive-oxide layer.

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