Fundamental mode operation in broad area quantum cascade lasers

• US 10,084,282 B1
• Filed: 08/14/2017
• Issued: 09/25/2018
• Est. Priority Date: 08/14/2017
• Status: Active Grant

• Current Assignee: Air Force Government of The United States of America As Represented By The Secretary
• Original Assignee: United States Of America As Represented By The Secretary Of The Air Force
• Inventors: Kaspi, Ron, Yang, Chi
• Primary Examiner(s): Nugyen, Tuan
• Application Number:
  US15/676,825
• Time in Patent Office: 407 Days
• Field of Search: 372 20, 372 4401, 372 4601, 385129
• CPC Class Codes: H01S 2301/166 Single transverse or lateral mode
• CPC Class Codes: H01S 5/0655 Single transverse or lateral mode emission
• CPC Class Codes: H01S 5/1017 Waveguide having a void for insertion of materials to change optical properties
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/3401 having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
• CPC Class Codes: H01S 5/3402 intersubband lasers, e.g. transitions within the conduction or valence bands

Abstract

A broad area quantum cascade laser subject to having high order transverse optical modes during operation includes a laser cavity at least partially enclosed by walls, and a perturbation in the laser cavity extending from one or more of the walls. The perturbation may have a shape and a size sufficient to suppress high order transverse optical modes during operation of the broad area quantum cascade laser, whereby a fundamental transverse optical mode is selected over the high order transverse optical modes. As a result, the fundamental transverse mode operation in broad-area quantum cascade lasers can be regained, when it could not otherwise be without such a perturbation.

Claims

1. A broad area quantum cascade laser for emitting infrared light, comprising:

an optical cavity comprised of an active region situated between a top cladding and a bottom cladding;

the cavity being fabricated from structure grown by gas source molecular beam epitaxy on an n−

InP(001) substrate;

the active region being fabricated in a plurality of stages, with multilayer GaInAs/AlInAs injector regions in each of the stages;

the top and bottom claddings having a cladding refractive index;

a concave excavation extending into the bottom cladding and having a refractive index less than the cladding refractive index; and

the excavation having a size and shape to suppress high order transverse modes of light in the cavity and favor a fundamental transverse mode, whereby

the laser generates a single-lobed light beam collinear with an optical axis.

2. The broad area quantum cascade laser defined in claim 1 wherein the excavation is comprised of at least two of the excavations.

3. The broad area quantum cascade laser defined in claim 2 wherein the size and shape of the excavations are identical.

4. The broad area quantum cascade laser defined in claim 2 further comprising:

the optical axis lying orthogonal to the high order transverse optical modes; and

the excavations each having a rectangular cross-section with a major axis lying parallel to the optical axis.

5. The broad area quantum cascade laser defined in claim 2 wherein the excavations lie in parallel to one another.

6. The broad area quantum cascade laser defined in claim 2 further comprising:

a plane intersecting the optical axis;

wherein

at least one of the excavations lies on each side of the plane.

7. A broad area quantum cascade laser for emitting infrared light, comprising:

an optical cavity formed from a top cladding, a bottom cladding and sidewalls, and including an active region situated between the top cladding and the bottom cladding;

a concave excavation extending into the cavity from a sidewall, and having an excavation refractive index;

the top and bottom claddings having a cladding refractive index less than the excavation refractive index;

the excavation being configured to suppress high order transverse modes of light in the cavity and favor a fundamental transverse mode;

the optical cavity being fabricated from structure grown by gas source molecular beam epitaxy on an n−

InP(001) substrate; and

the active region being fabricated in a plurality of stages, with multilayer GaInAs/AlInAs injector regions in each of the stages, whereby

the laser emits a single-lobed light beam aligned with an optical axis.

8. The broad area quantum cascade laser defined in claim 7 wherein the excavation is comprised of at least two of the excavations, with at least one of the excavations extending into the optical cavity from each of the sidewalls.

9. The broad area quantum cascade laser defined in claim 8 wherein the excavations have an identical configuration.

10. The broad area quantum cascade laser defined in claim 8 wherein at least one of the excavations extends into the bottom cladding.

11. A method for making a broad area quantum cascade laser for emitting infrared light, comprising:

fabricating an optical cavity from structure grown by gas source molecular beam epitaxy on an n−

InP(001) substrate;

fabricating a strain compensated active region in a plurality of stages, with multilayer GaInAs/AlInAs injector regions in each of the stages;

fabricating an InP top cladding including an approximately 3 μ

m thick layer with a carrier concentration rising from about 10¹⁶/cm³ to 10¹⁷/cm³, and an additional approximately 1 μ

m thick layer of n+ InP with a carrier concentration of approximately 10¹⁹/cm³;

fabricating a bottom cladding;

situating the active region between the top cladding and the bottom cladding, wherein the top and bottom claddings have a cladding refractive index; and

extending a concave excavation into the bottom cladding;

wherein

the excavation has a refractive index less than the cladding refractive index, and a size and shape to suppress high order transverse modes of light in the optical cavity and favor a fundamental transverse mode, whereby

the laser generates a single-lobed light beam collinear with an optical axis.

12. The method defined in claim 11 for making a broad area quantum cascade laser wherein:

the optical cavity includes sidewalls; and

further comprising

extending the excavation from one of the sidewalls into the bottom cladding.

13. The method defined in claim 11 making a broad area quantum cascade laser further comprising extending at least two of the excavations into the bottom cladding.

14. The method defined in claim 13 making a broad area quantum cascade laser wherein the excavations have an identical configuration.

15. The method defined in claim 13 for making a broad area quantum cascade laser further comprising extending at least two of the excavations into the bottom cladding from different sidewalls, respectively.

16. The method defined in claim 15 for making a broad area quantum cascade laser wherein the excavations have an identical configuration.

17. The method defined in claim 13 for making a broad area quantum cascade laser wherein:

the optical axis lies orthogonal to the high order transverse optical modes;

a plane intersects the optical axis; and

at least one of the excavations lies on each side of the plane.

18. The method defined in claim 17 making a broad area quantum cascade laser wherein an equal number of the excavations lie on each side of the plane.

19. The method defined in claim 18 for making a broad area quantum cascade laser wherein the excavations each have a rectangular cross-section with a major axis lying parallel to the optical axis.