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Deposition of metal borides

  • US 10,087,522 B2
  • Filed: 04/21/2016
  • Issued: 10/02/2018
  • Est. Priority Date: 04/21/2016
  • Status: Active Grant
First Claim
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1. A method of forming a metal boride comprising:

  • providing a substrate for processing in a reaction chamber;

    performing a metal halide precursor deposition onto the substrate, the performing the metal halide precursor deposition step comprises;

    pulsing a metal halide precursor comprising at least one of niobium tetrafluoride (NbF4) and niobium pentafluoride (NbF5) onto the substrate; and

    purging an excess of the metal halide precursor from the reaction chamber; and

    performing a borane compound precursor deposition onto the substrate, the performing the borane compound precursor deposition step comprises;

    pulsing a borane compound precursor onto the substrate; and

    purging an excess of the borane compound precursor from the reaction chamber;

    wherein the metal halide precursor comprises a niobium halide;

    wherein a reaction between the metal halide precursor and the borane compound precursor forms a niobium boride film;

    wherein the metal halide precursor deposition step is repeated a predetermined number of times; and

    wherein the borane compound precursor deposition step is repeated a predetermined number of times.

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