Semiconductor structure and manufacturing method thereof
First Claim
1. A semiconductor structure, comprising:
- a substrate;
a first gate structure on the substrate;
a first spacer on at least one sidewall of the first gate structure;
a mask layer on the first gate structure, the mask layer comprising a dielectric material;
a source drain structure adjacent to the first spacer;
a first dielectric layer on the mask layer and having an opening therein, wherein the opening is over the source drain structure;
a conductor electrically connected to the source drain structure, wherein the conductor has an upper portion in the opening of the first dielectric layer and a lower portion between the upper portion and the source drain structure;
a protection layer between the lower portion of the conductor and the first spacer and between the upper portion of the conductor and the source drain structure, wherein the protection layer has a sloped upper portion with slopped upper sidewalls and has a straight lower portion with straight lower sidewalls, wherein an upper surface of the sloped upper portion of the protection layer is level with an upper surface of the mask layer; and
a second dielectric layer between the lower portion of the conductor and the first spacer and between the protection layer and the source drain structure, wherein an interface between the protection layer and the second dielectric layer is between an upper surface of the first gate structure and a lower surface of the first gate structure, wherein the protection layer comprises a same material that extends continuously from the upper portion of the conductor to the second dielectric layer, wherein the second dielectric layer comprises a same material that extends continuously from the protection layer to the source drain structure.
1 Assignment
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Accused Products
Abstract
A semiconductor structure includes a substrate, a first gate structure, a first spacer, a source drain structure, a first dielectric layer, a conductor, and a protection layer. The first gate structure is present on the substrate. The first spacer is present on a sidewall of the first gate structure. The source drain structure is present adjacent to the first spacer. The first dielectric layer is present on the first gate structure and has an opening therein, in which the source drain structure is exposed through the opening. The conductor is electrically connected to the source drain structure, in which the conductor has an upper portion in the opening of the first dielectric layer and a lower portion between the upper portion and the source drain structure. The protection layer is present between the lower portion and the first spacer and between the upper portion and the source drain structure.
29 Citations
20 Claims
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1. A semiconductor structure, comprising:
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a substrate; a first gate structure on the substrate; a first spacer on at least one sidewall of the first gate structure; a mask layer on the first gate structure, the mask layer comprising a dielectric material; a source drain structure adjacent to the first spacer; a first dielectric layer on the mask layer and having an opening therein, wherein the opening is over the source drain structure; a conductor electrically connected to the source drain structure, wherein the conductor has an upper portion in the opening of the first dielectric layer and a lower portion between the upper portion and the source drain structure; a protection layer between the lower portion of the conductor and the first spacer and between the upper portion of the conductor and the source drain structure, wherein the protection layer has a sloped upper portion with slopped upper sidewalls and has a straight lower portion with straight lower sidewalls, wherein an upper surface of the sloped upper portion of the protection layer is level with an upper surface of the mask layer; and a second dielectric layer between the lower portion of the conductor and the first spacer and between the protection layer and the source drain structure, wherein an interface between the protection layer and the second dielectric layer is between an upper surface of the first gate structure and a lower surface of the first gate structure, wherein the protection layer comprises a same material that extends continuously from the upper portion of the conductor to the second dielectric layer, wherein the second dielectric layer comprises a same material that extends continuously from the protection layer to the source drain structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor structure, comprising:
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a substrate; a gate structure on the substrate; a mask layer on the gate structure; a spacer on at least one sidewall of the gate structure; a source drain structure adjacent to the spacer; a bottom conductor electrically connected to the source drain structure; a protection layer between the bottom conductor and the spacer; a first dielectric layer on the gate structure and having an opening therein, wherein the bottom conductor is at least partially exposed through the opening; and an upper conductor electrically connected to the bottom conductor through the opening of the first dielectric layer and at least covering the protection layer, wherein a first end portion of the protection layer contacting the upper conductor has sloped sidewalls, wherein an upper surface of the first end portion is level with an upper surface of the mask layer; and a second dielectric layer between the bottom conductor and the spacer and between the protection layer and the source drain structure, wherein the second dielectric layer and the protection layer are made of different materials, wherein the second dielectric layer contacts the protection layer at a location between an upper surface of the gate structure and a lower surface of the gate structure, wherein the protection layer has a uniform width and is formed of a same material that extends from the upper conductor to the second dielectric layer, and wherein the second dielectric layer is formed of a same material that extends from the protection layer to the source drain structure. - View Dependent Claims (12, 13, 14)
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15. A semiconductor structure, comprising:
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a substrate; a first gate structure on the substrate; a first spacer on at least one sidewall of the first gate structure; a source drain structure adjacent to the first spacer; a bottom conductor electrically connected to the source drain structure; a protection layer between the bottom conductor and the first spacer, wherein sloped upper portions of the protection layer have slanted sidewalls, and lower portions of the protection layer have straight sidewalls; a first dielectric layer on the first gate structure; a second dielectric layer between the first gate structure and the first dielectric layer, wherein an upper surface of the sloped upper portions of the protection layer is level with an upper surface of the second dielectric layer, wherein the sloped upper portions of the protection layer adjoin the lower portions of the protection layer between the upper surface of the second dielectric layer and a lower surface of the second dielectric layer; a third dielectric layer between the bottom conductor and the first spacer, and between the protection layer and the source drain structure, wherein an interface between the third dielectric layer and the protection layer is closer to the substrate than an upper surface of the first gate structure distal the substrate, wherein the protection layer comprises a same material that extends continuously along the first spacer from an upper surface of the first spacer to the third dielectric layer, wherein the third dielectric layer comprises a same material that extends continuously from the protection layer to the source drain structure; and an upper conductor extending through the first dielectric layer and electrically connected to the bottom conductor. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification