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Semiconductor structure and manufacturing method thereof

  • US 10,090,249 B2
  • Filed: 02/04/2016
  • Issued: 10/02/2018
  • Est. Priority Date: 12/17/2015
  • Status: Active Grant
First Claim
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1. A semiconductor structure, comprising:

  • a substrate;

    a first gate structure on the substrate;

    a first spacer on at least one sidewall of the first gate structure;

    a mask layer on the first gate structure, the mask layer comprising a dielectric material;

    a source drain structure adjacent to the first spacer;

    a first dielectric layer on the mask layer and having an opening therein, wherein the opening is over the source drain structure;

    a conductor electrically connected to the source drain structure, wherein the conductor has an upper portion in the opening of the first dielectric layer and a lower portion between the upper portion and the source drain structure;

    a protection layer between the lower portion of the conductor and the first spacer and between the upper portion of the conductor and the source drain structure, wherein the protection layer has a sloped upper portion with slopped upper sidewalls and has a straight lower portion with straight lower sidewalls, wherein an upper surface of the sloped upper portion of the protection layer is level with an upper surface of the mask layer; and

    a second dielectric layer between the lower portion of the conductor and the first spacer and between the protection layer and the source drain structure, wherein an interface between the protection layer and the second dielectric layer is between an upper surface of the first gate structure and a lower surface of the first gate structure, wherein the protection layer comprises a same material that extends continuously from the upper portion of the conductor to the second dielectric layer, wherein the second dielectric layer comprises a same material that extends continuously from the protection layer to the source drain structure.

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