Gate-all-around fin device
First Claim
1. A method comprising:
- forming a plurality of fin structures from a substrate;
forming a continuous shallow N-well in the substrate;
forming a P-well within the substrate and corresponding fin structures of the plurality of fin structures;
forming a source contact on an exposed portion of a first fin structure;
forming a drain contact on an exposed portion of an adjacent fin structure to the first fin structure; and
forming a gate structure in a dielectric fill material about the first fin structure and extending over the continuous shallow N well, wherein;
the gate structure and the first fin structure comprising the source contact are formed completely over the shallow N-well, thereby forming a floating contact.
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Accused Products
Abstract
A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.
37 Citations
8 Claims
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1. A method comprising:
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forming a plurality of fin structures from a substrate; forming a continuous shallow N-well in the substrate; forming a P-well within the substrate and corresponding fin structures of the plurality of fin structures; forming a source contact on an exposed portion of a first fin structure; forming a drain contact on an exposed portion of an adjacent fin structure to the first fin structure; and forming a gate structure in a dielectric fill material about the first fin structure and extending over the continuous shallow N well, wherein; the gate structure and the first fin structure comprising the source contact are formed completely over the shallow N-well, thereby forming a floating contact. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification