Thin film transistor with a reaction layer creating oxygen vacancies in an oxide semiconductor

• US 10,090,337 B2
• Filed: 07/07/2016
• Issued: 10/02/2018
• Est. Priority Date: 09/11/2013
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Okumura, Hiroshi, Lee, Je-Hun, Park, Jin-Hyun
• Primary Examiner(s): Bradford, Peter
• Application Number:
  US15/204,433
• Publication Number:
  US 20160322390A1
• Time in Patent Office: 817 Days
• CPC Class Codes: H01L 21/385 using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

A thin film transistor includes a gate electrode on a substrate, a gate insulation layer which covers the gate electrode on the substrate, an oxide semiconductor pattern which is disposed on the gate insulation layer and includes a channel portion superimposed over the gate electrode, and low resistance patterns provided at edges of the channel portion, respectively, and including oxygen vacancies, a channel passivation layer on the oxide semiconductor pattern, a reaction layer which covers the oxide semiconductor pattern and the channel passivation layer, and includes a metal oxide, and a source electrode and a drain electrode which contact the oxide semiconductor pattern.

Claims

1. A thin film transistor, comprising:

a substrate;

an oxide semiconductor pattern which is disposed on the substrate and includes;

a channel portion;

contact portions spaced apart from the channel portion; and

low resistance patterns directly disposed on the substrate, respectively located between the channel portion and the contact portions, and having oxygen vacancies greater than those of the channel portion and the contact portion;

a gate insulation layer covering the channel portion;

a gate electrode on the gate insulation layer;

a reaction layer covering the oxide semiconductor pattern and the gate electrode, the reaction layer including a metal oxide and inducing oxygen vacancies of the oxide semiconductor pattern; and

a source electrode and a drain electrode extending through the reaction layer and respectively contacting the contact portions of the oxide semiconductor pattern which include the oxygen vacancies.

2. The thin film transistor of claim 1, wherein the reaction layer includes aluminum oxide.

3. The thin film transistor of claim 1, wherein the low resistance patterns contact the reaction layer.

4. The thin film transistor of claim 1, wherein the gate electrode is superimposed over the channel portion with respect to the gate insulation layer.

5. The thin film transistor of claim 4, wherein the source electrode and the drain electrode are disposed on the reaction layer, and extend, respectively, through contact holes formed in the reaction layer.

6. The thin film transistor of claim 5, wherein the source electrode and the drain electrode are non-overlapping with the gate electrode.

7. The thin film transistor of claim 1, wherein the reaction layer includes oxygen atoms or oxygen ions transferred from the oxide semiconductor pattern.