Gate-all-around fin device
First Claim
1. A method comprising:
- forming a doped well in a substrate of a first conductivity type;
forming a doped well ring of a second conductivity type in the substrate to enclose a central well of the first conductivity type in the substrate;
forming a first doped fin contact region of the first conductivity type to form a source contact to a gate structure over the central well of the first conductivity type; and
forming a second doped fin contact region of the second conductivity type to form drain regions to the gate structure, the second doped fin contact region being formed over the doped well ring,wherein the drain regions include alternating p regions and n regions formed directly on the second doped fin contact region.
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Abstract
A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.
39 Citations
8 Claims
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1. A method comprising:
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forming a doped well in a substrate of a first conductivity type; forming a doped well ring of a second conductivity type in the substrate to enclose a central well of the first conductivity type in the substrate; forming a first doped fin contact region of the first conductivity type to form a source contact to a gate structure over the central well of the first conductivity type; and forming a second doped fin contact region of the second conductivity type to form drain regions to the gate structure, the second doped fin contact region being formed over the doped well ring, wherein the drain regions include alternating p regions and n regions formed directly on the second doped fin contact region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification