LED having etched light emitting surface for increased light extraction

• US 10,090,437 B2
• Filed: 01/31/2014
• Issued: 10/02/2018
• Est. Priority Date: 02/11/2013
• Status: Active Grant

• Current Assignee: Lumileds LLC (Apollo Global Management, Inc.)
• Original Assignee: Lumileds LLC (Apollo Global Management, Inc.)
• Inventors: Timmering, Cornelis Eustatius, Verschuuren, Marcus Antonius, Lopez, Toni, Balkenende, Abraham Rudolf
• Primary Examiner(s): Nicely, Joseph C
• Assistant Examiner(s): Baptiste, Wilner Jean
• Application Number:
  US14/762,568
• Publication Number:
  US 20150364647A1
• Time in Patent Office: 1,705 Days
• Field of Search: 257 76, 257103
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

The present invention relates to a light emitting device (100) comprising: a substrate (102); a light emitting diode structure (106) arranged on the substrate (102), the diode structure (106) comprising a first semiconducting layer (108), an active region (110) and a second semiconducting layer (112), wherein a light output surface of the diode structure comprises a plurality of protruding surface structures (104) each having a peak height, a sidewall slope (122) and orientation in relation to the substrate, the plurality of protruding structures (104) comprising a first set and a second set of protruding surface structures, the first set and second set of protruding surface structures differing by at least one of the peak height, sidewall slope and orientation in relation to the substrate. The invention also relates to a method for manufacturing a light emitting device where the protruding surface structures are formed by imprint lithography to form a three-dimensional pattern and subsequent etching.

Claims

1. A light emitting device comprising:

a light emitting diode structure, said diode structure comprising a first semiconducting layer, a second semiconducting layer, and an active region sandwiched between said first and second semiconducting layer, at least one of said first and second semiconducting layer having a light output surface facing away from said active region, wherein the light output surface emits light out of the diode structure,

wherein a growth substrate used to epitaxially grow the first semiconducting layer, the second semiconducting layer, and the active region has been removed from the diode structure;

wherein the light output surface has an area extending in an x direction and a perpendicular y direction;

wherein said light output surface comprises a plurality of differently orientated protruding surface structures extending in both the x direction and the y direction such that there is a two-dimensional array of individual ones of the protruding surface structures, each protruding surface structure having a peak height, a sidewall slope and an orientation in relation to the active region, said plurality of protruding surface structures comprising a first set and a second set of protruding surface structures, said first set and second set of protruding surface structures differing by at least one of said peak height, sidewall slope and orientation in relation to the active region to increase light extraction out of the protruding surface structures in a direction away from the active region; and

wherein, for at least a first subset of the protruding surface structures, which forms a majority of the protruding surface structures, their orientations with respect to other protruding surface structures directly next to each of the protruding surface structures in the first subset of protruding surface structures are different so that sloped sidewalls of the adjacent protruding surface structures do not directly face each other.

2. The light emitting device according to claim 1, wherein said first set of protruding surface structures exhibit a peak height and a sidewall slope different from said second set of protruding surface structures.

3. The light emitting device according to claim 1, wherein at least one protruding surface structure has a sidewall slope having an angle larger than 50°

in relation to said active region.

4. The light emitting device according to claim 1, wherein said plurality of protruding surface structures are arranged in a pseudo-random pattern.

5. The light emitting device according to claim 1, wherein at least one sidewall slope angle of a protruding surface structure is different from that of an adjacent protruding surface structure.

6. The light emitting device according to claim 1, wherein one of said first and second semiconductor layer is a p-type doped layer and the other is an n-type doped layer.

7. The light emitting device according to claim 1, wherein one of said first and second semiconductor layer is a p-type GaN layer and the other is an n-type GaN layer.

8. The light emitting device according to claim 1, wherein one of said first and second semiconductor layer comprises a non-doped or n-doped buffer region forming the light output surface.

9. The light emitting device according to claim 1, wherein said substrate is selected from a group comprising sapphire, Si and SiC.

10. The light emitting device according to claim 1, wherein said active region is a multi quantum-well structure.

11. The light emitting device of claim 1 wherein the light output surface is an n-type semiconductor layer, and where the light emitting device is a flip-chip with electrodes on a surface of the light emitting device opposite to the light output surface.