Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
First Claim
Patent Images
1. A communication device comprising:
- a laser diode device comprising;
a gallium and nitrogen containing material including a {20-21} crystalline surface region orientation;
an n-type cladding material overlying the gallium and nitrogen containing material, the n-type cladding material being substantially free from an aluminum bearing material;
an active region comprising at least three quantum wells and a plurality of barrier layers, each of the quantum wells having a thickness of 1 nm and greater, and each of the plurality of barrier layers having a thickness ranging from 1 nm to less than 3 nm, each adjacent pair of the quantum wells separated by one of the plurality of barrier layers;
a p-type cladding material overlying the active region, the p-type cladding material being free from AlGaN;
a p-type material overlying the p-type cladding material;
a laser stripe region overlying the crystalline surface region, the laser stripe region being aligned substantially in a projection of the c-direction, the laser stripe region comprising a first end and a second end;
a first facet formed on the first end; and
a second facet formed on the second end; and
a package coupled to the laser diode device.
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Abstract
A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
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Citations
20 Claims
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1. A communication device comprising:
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a laser diode device comprising; a gallium and nitrogen containing material including a {20-21} crystalline surface region orientation; an n-type cladding material overlying the gallium and nitrogen containing material, the n-type cladding material being substantially free from an aluminum bearing material; an active region comprising at least three quantum wells and a plurality of barrier layers, each of the quantum wells having a thickness of 1 nm and greater, and each of the plurality of barrier layers having a thickness ranging from 1 nm to less than 3 nm, each adjacent pair of the quantum wells separated by one of the plurality of barrier layers; a p-type cladding material overlying the active region, the p-type cladding material being free from AlGaN; a p-type material overlying the p-type cladding material; a laser stripe region overlying the crystalline surface region, the laser stripe region being aligned substantially in a projection of the c-direction, the laser stripe region comprising a first end and a second end; a first facet formed on the first end; and a second facet formed on the second end; and a package coupled to the laser diode device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A communication device comprising:
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a laser diode device comprising; a gallium and nitrogen containing material including a {20-21} crystalline surface region orientation; an n-type cladding material overlying the gallium and nitrogen containing material, the n-type cladding material being substantially free from an aluminum bearing material; an active region comprising at least three quantum wells and a plurality of barrier layers, each of the quantum wells having a thickness of 1 nm and greater, and each of the plurality of barrier layers having a p-type characteristic and a thickness ranging from 1 nm to less than 3 nm, each adjacent pair of the quantum wells separated by one of the plurality of barrier layers; a p-type cladding material overlying the active region, the p-type cladding material being substantially free from AlGaN; a p-type material overlying the p-type cladding material; a laser stripe region overlying the crystalline surface region, the laser stripe region being aligned substantially in a projection of the c-direction, the laser stripe region comprising a first end and a second end; a first facet formed on the first end; and a second facet formed on the second end; and a package coupled to the laser diode device. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A communication device comprising:
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a laser diode device comprising; a gallium and nitrogen containing material including a {20-21} crystalline surface region orientation; an n-type cladding material overlying the gallium and nitrogen containing material an active region comprising at least three quantum wells and a plurality of barrier layers, each of the quantum wells having a thickness of 1 nm and greater, and each of the plurality of barrier layers having a thickness ranging from 1 nm to less than 3 nm, each adjacent pair of the quantum wells separated by one of the plurality of barrier layers; a p-type cladding material overlying the active region, the p-type cladding material being free from AlGaN; a p-type material overlying the p-type cladding material; a laser stripe region overlying the crystalline surface region, the laser stripe region being aligned substantially in a projection of the c-direction, the laser stripe region comprising a first end and a second end; a first facet formed on the first end; and a second facet formed on the second end, wherein the active region is configured operably for a forward voltage of less than 7V for an output power of 60 mW and greater; and a package coupled to the laser diode device.
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Specification