Removing substrate pretreatment compositions in nanoimprint lithography

• US 10,095,106 B2
• Filed: 01/30/2017
• Issued: 10/09/2018
• Est. Priority Date: 03/31/2016
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Stachowiak, Timothy Brian, Liu, Weijun, Khusnatdinov, Niyaz, Ye, Zhengmao, Ito, Toshiki
• Primary Examiner(s): Wieczorek, Michael P
• Application Number:
  US15/418,952
• Publication Number:
  US 20170282440A1
• Time in Patent Office: 617 Days
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

Abstract

A nanoimprint lithography method to remove uncured pretreatment composition from an imprinted nanoimprint lithography substrate. The method includes disposing a pretreatment composition on a nanoimprint lithography substrate to form a pretreatment coating and disposing discrete portions of imprint resist on the pretreatment coating, each discrete portion of the imprint resist covering a target area of the nanoimprint lithography substrate. A composite polymerizable coating is formed on the nanoimprint lithography substrate as each discrete portion of the imprint resist spreads beyond its target area, and the composite polymerizable coating is contacted with a nanoimprint lithography template. The composite polymerizable coating is polymerized to yield a composite polymeric layer and an uncured portion of the pretreatment coating on the nanoimprint lithography substrate, and the uncured portion of the pretreatment coating is removed from the nanoimprint lithography substrate.

Claims

1. A nanoimprint lithography method comprising:

disposing a pretreatment composition on a nanoimprint lithography substrate to form a pretreatment coating on the nanoimprint lithography substrate, wherein the pretreatment composition comprises a polymerizable component;

disposing discrete portions of imprint resist on the pretreatment coating, each discrete portion of the imprint resist covering a target area of the nanoimprint lithography substrate, wherein the imprint resist is a polymerizable composition;

forming a composite polymerizable coating on the nanoimprint lithography substrate as each discrete portion of the imprint resist spreads beyond its target area, wherein the composite polymerizable coating comprises a mixture of the pretreatment composition and the imprint resist;

contacting the composite polymerizable coating with a nanoimprint lithography template;

polymerizing the composite polymerizable coating to yield a composite polymeric layer and an uncured portion of the pretreatment coating on the nanoimprint lithography substrate; and

removing the uncured portion of the pretreatment coating from the nanoimprint lithography substrate.

2. The nanoimprint lithography method of claim 1, wherein removing the uncured portion of the pretreatment coating from the nanoimprint lithography substrate comprises heating the nanoimprint lithography substrate to evaporate the uncured portion of the pretreatment coating.

3. The nanoimprint lithography method of claim 2, wherein heating the nanoimprint lithography substrate comprises heating the nanoimprint lithography substrate to a maximum temperature less than the glass transition temperature of the imprint resist.

4. The nanoimprint lithography method of claim 1, wherein removing the uncured portion of the pretreatment coating comprises reducing the pressure surrounding the nanoimprint lithography substrate to a pressure below atmospheric pressure.

5. The nanoimprint lithography method of claim 4, further comprising heating the nanoimprint lithography template.

6. The nanoimprint lithography method of claim 1, wherein removing the uncured portion of the pretreatment coating comprises irradiating the uncured portion of the pretreatment coating with electromagnetic radiation.

7. The nanoimprint lithography method of claim 6, wherein the electromagnetic radiation comprises at least one of deep ultraviolet light, infrared light, and microwaves.

8. The nanoimprint lithography method of claim 6, wherein irradiating comprises irradiating with at least one of a CO₂ laser, a Nd:

YAG laser, and a diode laser.

9. The nanoimprint lithography method of claim 6, wherein irradiating comprises blanket exposure.

10. The nanoimprint lithography method of claim 1, wherein removing the uncured portion of the pretreatment coating from the nanoimprint lithography substrate comprises rinsing the nanoimprint lithography substrate with organic rinsing liquid to wash away the uncured portion of the pretreatment coating.

11. The nanoimprint lithography method of claim 10, wherein the organic rinsing liquid is selected from the group consisting of a hydrocarbon-based solvent, a ketone-based solvent, an ester-based solvent, an alcohol-based solvent, an amide-based solvent, and an ether-based solvent.

12. The nanoimprint lithography method of claim 10, wherein the organic rinsing liquid is 4-methyl-2-pentanol or butyl acetate.

13. A nanoimprint lithography method comprising:

a) disposing a pretreatment composition on a first nanoimprint lithography substrate to form a pretreatment coating on the nanoimprint lithography substrate, wherein the pretreatment composition comprises a polymerizable component;

b) disposing discrete portions of imprint resist on the pretreatment coating, each discrete portion of the imprint resist covering a target area of the nanoimprint lithography substrate, wherein the imprint resist is a polymerizable composition;

c) forming a composite polymerizable coating on the nanoimprint lithography substrate as each discrete portion of the imprint resist spreads beyond its target area, wherein the composite polymerizable coating comprises a mixture of the pretreatment composition and the imprint resist;

d) contacting the composite polymerizable coating with a nanoimprint lithography template;

e) polymerizing the composite polymerizable coating to yield a composite polymeric layer;

f) repeating b) through e) to yield an imprinted nanoimprint lithography substrate;

g) repeating a) through f) to yield a multiplicity of imprinted nanoimprint lithography substrates, wherein each imprinted nanoimprint lithography substrate comprises an uncured portion of the pretreatment coating; and

h) removing the uncured portions of the pretreatment coating from the multiplicity of imprinted nanoimprint lithography substrates in a batch process.

14. The nanoimprint lithography method of claim 13, wherein removing the uncured portion of the pretreatment coating from the multiplicity of imprinted nanoimprint lithography substrates in a batch process comprises heating the multiplicity of imprinted nanoimprint lithography substrates.

15. The nanoimprint lithography method of claim 13, wherein removing the uncured portion of the pretreatment coating from the multiplicity of imprinted nanoimprint lithography substrates in a batch process comprises reducing a pressure surrounding the multiplicity of nanoimprint lithography substrates to a pressure below atmospheric pressure.

16. The nanoimprint lithography method of claim 15, further comprising heating the multiplicity of imprinted nanoimprint lithography substrates.

17. The nanoimprint lithography method of claim 13, wherein removing the uncured portion of the pretreatment coating from the multiplicity of imprinted nanoimprint lithography substrates in a batch process comprises irradiating the multiplicity of nanoimprint lithography substrates with electromagnetic radiation.

18. The nanoimprint lithography method of claim 17, wherein the electromagnetic radiation comprises microwave radiation.