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Atomic layer etching of tungsten and other metals

  • US 10,096,487 B2
  • Filed: 08/17/2016
  • Issued: 10/09/2018
  • Est. Priority Date: 08/19/2015
  • Status: Active Grant
First Claim
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1. A method comprising:

  • (a) exposing a surface of a metal on a substrate to a halide chemistry to form a modified halide-containing surface layer, the metal being selected from the group consisting of tungsten (W) and cobalt (Co); and

    (b) applying a bias voltage to the substrate while exposing the modified halide-containing surface layer to a plasma to thereby remove the modified halide-containing surface layer.

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