Semiconductor device and manufacturing method thereof

• US 10,096,628 B2
• Filed: 02/28/2017
• Issued: 10/09/2018
• Est. Priority Date: 03/04/2016
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Pizarro, Marcos D
• Assistant Examiner(s): TYNES JR., LAWRENCE C
• Application Number:
  US15/444,695
• Publication Number:
  US 20170256572A1
• Time in Patent Office: 588 Days
• Field of Search: 257 43
• CPC Class Codes: G06F 3/0619 in relation to data integrity, e.g. data losses, bit errors
• CPC Class Codes: G06F 3/065 Replication mechanisms
• CPC Class Codes: G06F 3/0685 Hybrid storage combining heterogeneous device types, e.g. hierarchical storage, hybrid arrays
• CPC Class Codes: G11C 11/401 forming cells needing refreshing or charge regeneration, i.e. dynamic cells
• CPC Class Codes: G11C 11/418 Address circuits
• CPC Class Codes: G11C 11/419 Read-write [R-W] circuits
• CPC Class Codes: H01L 21/67196 characterized by the construction of the transfer chamber
• CPC Class Codes: H01L 21/67389 characterised by atmosphere control
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/14645 Colour imagers
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous

Abstract

Provided is a novel semiconductor device. A switching element, specifically a transistor having a well potential structure is manufactured by utilizing a structure including at least a composite material in which a first region and a second region are stacked over a base like a superlattice. The thickness of each of the first region and the second region is greater than or equal to 0.5 nm and less than or equal to 5 nm. A band structure can be controlled by adjusting the number of stacks, which enables application to a variety of semiconductor elements.

Claims

1. A semiconductor device comprising:

a semiconductor element including a composite comprising first regions and second regions,

wherein;

one of the second regions is in contact with one of the first regions,

the one of the first regions and the one of the second regions are arranged in a thickness direction of the composite,

the first regions each include at least In, Ga, and Zn,

the second regions each include In and Zn,

the second regions have a lower Ga concentration than the first regions,

the second regions serve as a well portion of a well potential,

the second regions have a smaller bandgap than the first regions, and

the one of the second regions is between the first regions in the thickness direction of the composite.

2. The semiconductor device according to claim 1, wherein a thickness of each of the first regions is greater than or equal to 0.5 nm and less than or equal to 5 nm.

3. The semiconductor device according to claim 1, wherein a thickness of each of the second regions is greater than or equal to 0.5 nm and less than or equal to 5 nm.

4. The semiconductor device according to claim 1, wherein the first regions and the second regions are alternately stacked.

5. The semiconductor device according to claim 1, wherein the composite has an atomic ratio of In:

Ga;

Zn =4;

2;

3 or a neighborhood.

6. The semiconductor device according to claim 1, wherein the composite has an atomic ratio of In:

Ga;

Zn =5;

2;

5 or a neighborhood.

7. The semiconductor device according to claim 1, wherein the composite has an atomic ratio of In:

Ga;

Zn =6;

1;

6 or a neighborhood.

8. A semiconductor device comprising:

a semiconductor element including a composite comprising first regions and second regions

wherein;

one of the second regions is in contact with one of the first regions,

the one of the first regions and the one of the second regions are arranged in a thickness direction of the composite,

the first regions and the second regions each include at least In, Ga, and Zn,

the second regions have a lower Ga concentration than the first regions,

the second regions serve as a well portion of a well potential,

the second regions have a smaller bandgap than the first regions, and

the one of the second regions is between the first regions in the thickness direction of the composite.

9. The semiconductor device according to claim 8, wherein a thickness of each of the first regions is greater than or equal to 0.5 nm and less than or equal to 5 nm.

10. The semiconductor device according to claim 8, wherein a thickness of each of the second regions is greater than or equal to 0.5 nm and less than or equal to 5 nm.