Semiconductor device and method for manufacturing same

• US 10,096,629 B2
• Filed: 06/02/2016
• Issued: 10/09/2018
• Est. Priority Date: 06/08/2015
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Saitoh, Takao, Kaneko, Seiji, Takamaru, Yutaka, Kanzaki, Yohsuke
• Primary Examiner(s): Ahmadi, Mohsen
• Assistant Examiner(s): Haider, Wasiul
• Application Number:
  US15/576,313
• Publication Number:
  US 20180151595A1
• Time in Patent Office: 859 Days
• CPC Class Codes: G02F 1/1343 Electrodes reflective electrodes G02F1/133553
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G09F 9/30 in which the desired character or characters are formed by combining individual elements panels comprising a number of electrodes in a single cell controlling light arriving from an independent light source, e.g. electro-optical or magneto-optical cell, G02F1/00
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 28/65 comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A semiconductor device (1001) includes a thin-film transistor (101) including a gate electrode (3), an oxide semiconductor layer (7), a gate insulating layer (5), a source electrode (9s), and a drain electrode (9d); a metal oxide layer (8) including a conductor region (70c) and formed from an oxide film from which the oxide semiconductor layer (7) is also formed; an interlayer insulating layer (13) covering the thin-film transistor and the metal oxide layer (8); and a transparent conductive layer (15) disposed on the interlayer insulating layer and electrically connected to the drain electrode, wherein the oxide semiconductor layer (7) and the metal oxide layer (8) contain indium, tin, and zinc, and the transparent conductive layer (15) overlaps at least a portion of the conductor region (70c) with the interlayer insulating layer (13) therebetween.

Claims

1. A semiconductor device comprising:

a substrate;

a thin-film transistor supported by the substrate and including a gate electrode, an oxide semiconductor layer, a gate insulating layer positioned between the gate electrode and the oxide semiconductor layer, and a source electrode and a drain electrode that are electrically connected to the oxide semiconductor layer;

a metal oxide layer including a conductor region, and formed from an oxide film from which the oxide semiconductor layer is also formed;

an interlayer insulating layer covering the thin-film transistor and the metal oxide layer; and

a transparent conductive layer disposed on the interlayer insulating layer and electrically connected to the drain electrode, wherein

the oxide semiconductor layer and the metal oxide layer contain indium, tin, and zinc,

the transparent conductive layer overlaps at least a portion of the conductor region with the interlayer insulating layer therebetween,

the interlayer insulating layer includes

a first insulating film covering the thin-film transistor and the metal oxide layer, and having an opening above the conductor region of the metal oxide layer, and

a second insulating film formed on the first insulating film and within the opening, and being in contact with, within the opening, the conductor region of the metal oxide layer, and

the transparent conductive layer overlaps the at east a portion of the conductor region with the second insulating film therebetween.

2. The semiconductor device according to claim 1, wherein the second insulating film is a reducing insulating film having a property of reducing an oxide semiconductor contained in the oxide semiconductor layer.

3. The semiconductor device according to claim 1, wherein the first insulating film includes an organic insulating film.

4. The semiconductor device according to claim 1, wherein the gate electrode is disposed on a side of the oxide semiconductor layer, the side being closer to the substrate, and

the oxide semiconductor layer has a multilayer structure including a first semiconductor layer containing indium, tin, and zinc, and a second semiconductor layer formed on the first semiconductor layer and containing indium and gallium.

5. The semiconductor device according to claim 4, wherein the metal oxide layer includes a first oxide layer formed from an oxide film from which the first semiconductor layer is also formed, and the second insulating film is in contact with, within the opening, the first oxide layer.

6. The semiconductor device according to claim 4, wherein the at least a portion of the metal oxide layer has a multilayer structure including a first oxide layer formed from an oxide film from which the first semiconductor layer is also formed, and a second oxide layer formed from an oxide film from which the second semiconductor layer is also formed, and the conductor region is formed in at least a portion of the first oxide layer and in at least a portion of the second oxide layer.

7. The semiconductor device according to claim 4, wherein the first semiconductor layer contains an In—

Sn—

Zn—

O-based oxide, and the second semiconductor layer contains an In—

Ga—

Zn—

O-based oxide.

8. The semiconductor device according to claim 1, wherein the gate electrode is disposed on a side of the oxide semiconductor layer, the side being closer to the substrate,

the oxide semiconductor layer is constituted solely by a first semiconductor layer containing indium, tin, and zinc, and

the metal oxide layer is constituted solely by a first oxide layer formed from an oxide film from which the first semiconductor layer is also formed.

9. The semiconductor device according to claim 8, further comprising another thin-film transistor, the other thin-film transistor including an active layer having a multilayer structure including a first layer formed from an oxide film from which the first semiconductor layer is also formed and a second layer formed on the first layer and containing indium and gallium but not containing tin.

10. The semiconductor device according to claim 1, wherein the conductor region has a sheet resistance of 200Ω

/□

or less.

11. The semiconductor device according to claim 1, wherein the metal oxide layer further includes a semiconductor region, and

the semiconductor region is positioned on a periphery of the metal oxide layer.

12. The semiconductor device according to claim 1, wherein the oxide semiconductor layer and the metal oxide layer contain an In—

Sn—

Zn—

O-based oxide.

13. The semiconductor device according to claim 12, wherein the oxide semiconductor layer and the metal oxide layer contain a crystalline portion.

14. A method for manufacturing a semiconductor device including a substrate, a thin-film transistor supported by the substrate, and a capacitive element, the method comprising:

(a) a step of forming, on the substrate, a gate electrode and a gate insulating layer covering the gate electrode;

(b) a step of forming, on the gate insulating layer, an oxide semiconductor film containing indium, tin, and zinc and patterning the oxide semiconductor film to form an active-layer-formation oxide semiconductor layer and an electrode-formation oxide semiconductor layer such that the active-layer-formation oxide semiconductor layer is disposed so as to have at least a portion overlapping the gate electrode with the gate insulating layer therebetween;

(c) a step of forming a source electrode and a drain electrode that are in contact with the active-layer-formation oxide semiconductor layer;

(d) a step of forming a first insulating film so as to cover the source electrode, the drain electrode, and the electrode-formation oxide semiconductor layer, and forming, in the first insulating film, a first opening through which a portion of the drain electrode is exposed, and a second opening through which a portion of the electrode-formation oxide semiconductor layer is exposed;

(e) a step of forming, on the first insulating film and within the first and second openings, a second insulating film having a property of reducing an oxide semiconductor contained in the electrode-formation oxide semiconductor layer, to cause a decrease in a resistance of a portion of the electrode-formation oxide semiconductor layer, the portion being in contact with the second insulating film within the second opening, to form a conductor region while a portion of the electrode-formation oxide semiconductor layer, the portion not being turned into a conductor, remains as a semiconductor region;

(f) a step of removing a portion of the second insulating film, the portion being positioned within the first opening, to form a contact hole that extends through the first and second insulating films and through which the drain electrode is exposed; and

(g) a step of forming a transparent conductive layer on the second insulating film and within the contact hole such that the transparent conductive layer is in contact with the drain electrode within the contact hole and overlaps at least a portion of the conductor region with the second insulating film therebetween.

15. The method for manufacturing a semiconductor device according to claim 14, wherein the step (b) includes a step (b1) of stacking a first semiconductor film containing indium, tin, and zinc, and, on the first semiconductor film, a second semiconductor film containing indium and gallium but not containing tin to obtain an oxide semiconductor film having a multilayer structure.

16. The method for manufacturing a semiconductor device according to claim 15, wherein the step (b) includes

a first patterning step (b2) of patterning, after the step (b1), only the second semiconductor film out of the oxide semiconductor film;

and

a second patterning step (b3) of patterning, after the step (b2), the first and second semiconductor films simultaneously.

17. The method for manufacturing a semiconductor device according to claim 16, wherein an etchant used in the step (b2) is phosphoric acid-nitric acid-acetic acid, and an etchant used in the step (b3) is oxalic acid.

18. The method for manufacturing a semiconductor device according to claim 15, wherein the electrode-formation oxide semiconductor layer is formed solely from the first semiconductor film, and the active-layer-formation oxide semiconductor layer is formed from the first and second semiconductor films.

19. The method for manufacturing a semiconductor device according to claim 14, wherein the oxide semiconductor film contains an In—

Sn—

Zn—

O-based oxide.