Metal oxide film and semiconductor device
First Claim
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1. A metal oxide film comprising:
- indium;
M which is Al, Ga, Y, or Sn; and
zinc,wherein a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in a direction perpendicular to a surface of the metal oxide film,wherein a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the surface of the metal oxide film, andwherein a proportion of a region other than the plurality of crystal parts is higher than or equal to 20% and lower than or equal to 60%.
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Abstract
A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.
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8 Claims
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1. A metal oxide film comprising:
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indium; M which is Al, Ga, Y, or Sn; and zinc, wherein a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in a direction perpendicular to a surface of the metal oxide film, wherein a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the surface of the metal oxide film, and wherein a proportion of a region other than the plurality of crystal parts is higher than or equal to 20% and lower than or equal to 60%. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification