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Method for synthesis of high quality large area bulk gallium based crystals

  • US 10,100,425 B2
  • Filed: 11/02/2015
  • Issued: 10/16/2018
  • Est. Priority Date: 10/09/2009
  • Status: Active Grant
First Claim
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1. A method for forming a gallium based crystal, comprising:

  • providing a gallium based seed crystal, whereinthe gallium based seed crystal comprises at least one of a +c-plane surface and a −

    c-plane surface, andat least one of the +c-plane surface and the −

    c-plane surface is bounded by four m-plane edges; and

    subjecting the gallium based seed crystal to an ammonothermal growth process to cause the gallium based seed crystal to grow in at least one of a +c direction and a −

    c direction by at least about 5 mm to form a c-grown gallium based crystal comprising at least four m-plane surfaces and at least one ±

    c-plane surface, whereinat least two of the at least four m-plane surfaces of the c-grown gallium based crystal each have an area larger than the at least one ±

    c-plane surface of the c-grown gallium based crystal.

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