Apparatus and method for manufacturing a semiconductor device
First Claim
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1. An apparatus for manufacturing a semiconductor device comprising:
- a reaction chamber provided with a substrate holder for holding a substrate; and
,a heater for heating the substrate;
wherein the heater comprises a vertical cavity surface emitting laser constructed and arranged to emit a radiation beam to a substrate in the apparatus,wherein the substrate holder is a substrate rack for holding a plurality of semiconductor substrates in a spaced apart relationship, the substrate rack comprising at least one support member defining a plurality of spaced apart substrate holding provisions, each of which substrate holding provisions is configured to independently hold a substrate in a substantially horizontal orientation and the vertical cavity surface emitting laser is constructed and arranged to emit radiation to the substrates in the substrate rack at least from a side of the substrate rack.
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Abstract
The invention relates to an apparatus for manufacturing a semiconductor device comprising a reaction chamber comprising a substrate holder for holding a substrate; and, a heater for heating the substrate. The heater may comprise a vertical cavity surface emitting laser constructed and arranged to emit a radiation beam to a substrate held by the substrate holder to heat the substrate.
1895 Citations
23 Claims
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1. An apparatus for manufacturing a semiconductor device comprising:
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a reaction chamber provided with a substrate holder for holding a substrate; and
,a heater for heating the substrate;
wherein the heater comprises a vertical cavity surface emitting laser constructed and arranged to emit a radiation beam to a substrate in the apparatus,wherein the substrate holder is a substrate rack for holding a plurality of semiconductor substrates in a spaced apart relationship, the substrate rack comprising at least one support member defining a plurality of spaced apart substrate holding provisions, each of which substrate holding provisions is configured to independently hold a substrate in a substantially horizontal orientation and the vertical cavity surface emitting laser is constructed and arranged to emit radiation to the substrates in the substrate rack at least from a side of the substrate rack. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 20, 21, 22)
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18. An apparatus for manufacturing a semiconductor device comprising:
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a reaction chamber provided with a substrate holder for holding a substrate; and
,a heater for heating the substrate;
wherein the heater comprises a vertical cavity surface emitting laser constructed and arranged to emit a radiation beam to a substrate in the apparatus,wherein the heater comprises a pre-heater to pre-heat the substrate and a final heater to heat the substrate at a final temperature and a substrate handler for moving the substrate from the pre-heater to the final heater and the vertical cavity surface emitting lasers to emit radiation to the substrate is provided in the pre-heater. - View Dependent Claims (19)
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23. A method for producing a semiconductor device, comprising:
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providing an apparatus for manufacturing a semiconductor device comprising; a reaction chamber provided with a substrate holder for holding a substrate; and
,a heater for heating the substrate;
wherein the heater comprises a vertical cavity surface emitting laser constructed and arranged to emit a radiation beam to a substrate in the apparatus,wherein the substrate holder is a substrate rack for holding a plurality of semiconductor substrates in a spaced apart relationship, the substrate rack comprising at least one support member defining a plurality of spaced apart substrate holding provisions, each of which substrate holding provisions is configured to independently hold a substrate in a substantially horizontal orientation and the vertical cavity surface emitting laser is constructed and arranged to emit radiation to the substrates in the substrate rack at least from a side of the substrate rack; providing a substrate; and heating the substrate with the vertical cavity surface emitting laser.
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Specification