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Method and structures for heat dissipating interposers

  • US 10,103,094 B2
  • Filed: 06/19/2017
  • Issued: 10/16/2018
  • Est. Priority Date: 12/19/2012
  • Status: Active Grant
First Claim
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1. A microelectronic assembly comprising,an interconnect element, comprising:

  • a semiconductor or insulating material layer having first and second ends and a first thickness extending between the first and second ends, the first end of the semiconductor or insulating material layer defining a first surface of the interconnect element;

    a thermally conductive layer having a second thickness of at least 10 microns and defining a second surface of the interconnect element;

    a plurality of conductive elements extending from the first surface of the interconnect element to the second surface of the interconnect element, wherein each of the plurality of conductive elements further includes an edge surface extending between a first conductive end and a second conductive end of the respective conductive element; and

    a dielectric layer between at least a portion of each conductive element and the thermally conductive layer and between at least a portion of each conductive element and the semiconductor or insulating material layer; and

    a barrier layer extending adjacent at least a portion of the dielectric layer and extending between the semiconductor or insulating material layer and the thermally conductive layer; and

    a microelectronic element attached to the interconnect element and including contact elements at a surface thereof, wherein the contact elements are electrically connected with the plurality of conductive elements,wherein the thermally conductive layer extends along the respective edge surfaces of the conductive elements, such that end surfaces of the plurality of conductive elements are exposed at a surface of the thermally conductive layer.

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