Semiconducting pixel, matrix of such pixels, semiconducting structure for the production of such pixels and their methods of fabrication
First Claim
1. A semiconductor configured to implement at least one pixel, the at least one pixel comprising at least three sub-pixels disposed one alongside the other, each said sub-pixel comprising a respective stack of semi-conducting layers, wherein:
- each said sub-pixel comprises a first active layer configured to emit a light at a first wavelength when an electric current passes through it;
at least one said sub-pixel defining a first sub-pixel, the first sub-pixel also comprises a first and a second electrode arranged on different sides of said first active layer so as to allow an electric current to pass through it;
another at least one said sub-pixel defining a second sub-pixel, the second sub-pixel also comprises a second active layer configured to emit a light at a second wavelength greater than said first wavelength;
another at least one said sub-pixel defining a third sub-pixel, the third sub-pixel also comprises a third active layer configured to emit a light at a third wavelength greater than said first wavelength and different from said second wavelength;
at least one of said second and third active layers being configured to emit a light when it is excited by the light at the first wavelength emitted by said first active layer of the same sub-pixelwherein;
said first active layer is at least partially transparent to said second wavelength;
said second active layer of said second sub-pixel is arranged on a first side of said first active layer and configured to emit said light at said second wavelength when it is traversed by an electric current, said second sub-pixel also comprising a third and a fourth electrode arranged on different sides of said second active layer so as to allow an electric current to pass through it without passing through said first active layer; and
said third active layer of said third sub-pixel is arranged on a second side of said first active layer, opposite to said first side, and configured to emit said light at said third wavelength when it is excited by the light at the first wavelength emitted by said first active layer of said third sub-pixel, said third sub-pixel also comprising a fifth and a sixth electrode arranged on different sides of said first active layer so as to allow an electric current to pass through it.
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Abstract
A pixel comprises three adjacent sub-pixels, formed by respective stacks of semi-conducting layers wherein: each sub-pixel comprises a first active layer, adapted for emitting a light at a first wavelength when an electric current passes through it; another sub-pixel comprises a second active layer, adapted for emitting a light at a second wavelength greater than the first wavelength; another sub-pixel comprises a third active layer, adapted for emitting a light at a third wavelength greater than the first wavelength and different from the second wavelength; at least one from among the second and third active layers being adapted for emitting light when it is excited by the light at the first wavelength emitted by the first active layer of the same sub-pixel. Semi-conducting structure and methods for the fabrication of such a pixel are provided.
42 Citations
10 Claims
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1. A semiconductor configured to implement at least one pixel, the at least one pixel comprising at least three sub-pixels disposed one alongside the other, each said sub-pixel comprising a respective stack of semi-conducting layers, wherein:
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each said sub-pixel comprises a first active layer configured to emit a light at a first wavelength when an electric current passes through it; at least one said sub-pixel defining a first sub-pixel, the first sub-pixel also comprises a first and a second electrode arranged on different sides of said first active layer so as to allow an electric current to pass through it; another at least one said sub-pixel defining a second sub-pixel, the second sub-pixel also comprises a second active layer configured to emit a light at a second wavelength greater than said first wavelength; another at least one said sub-pixel defining a third sub-pixel, the third sub-pixel also comprises a third active layer configured to emit a light at a third wavelength greater than said first wavelength and different from said second wavelength; at least one of said second and third active layers being configured to emit a light when it is excited by the light at the first wavelength emitted by said first active layer of the same sub-pixel wherein; said first active layer is at least partially transparent to said second wavelength; said second active layer of said second sub-pixel is arranged on a first side of said first active layer and configured to emit said light at said second wavelength when it is traversed by an electric current, said second sub-pixel also comprising a third and a fourth electrode arranged on different sides of said second active layer so as to allow an electric current to pass through it without passing through said first active layer; and said third active layer of said third sub-pixel is arranged on a second side of said first active layer, opposite to said first side, and configured to emit said light at said third wavelength when it is excited by the light at the first wavelength emitted by said first active layer of said third sub-pixel, said third sub-pixel also comprising a fifth and a sixth electrode arranged on different sides of said first active layer so as to allow an electric current to pass through it. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 10)
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9. A method for fabricating a semiconductor configured to implement at least one pixel comprising at least three sub-pixels disposed one alongside the other, each said sub-pixel comprising a respective stack of semi-conducting layers, wherein:
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each said sub-pixel comprises a first active layer configured to emit a light at a first wavelength when an electric current passes through it; at least one said sub-pixel defining a first sub-pixel, also comprises a first and a second electrode arranged on different sides of said first active layer so as to allow an electric current to pass through it; another at least one said sub-pixel defining a second sub-pixel, also comprises a second active layer configured to emit a light at a second wavelength greater than said first wavelength; another at least one said sub-pixel defining a third sub-pixel, also comprises a third active layer configured to emit a light at a third wavelength greater than said first wavelength and different from said second wavelength; at least one from among said second and third active layers being configured to emit a light when it is excited by the light at the first wavelength emitted by said first active layer of the same sub-pixel wherein; said first active layer is at least partially transparent to said second wavelength; said second active layer of said second sub-pixel is arranged on a first side of said first active layer and configured to emit a light at said second wavelength when it is traversed by an electric current, said second sub-pixel also comprising a third and a fourth electrode arranged on different sides of said second active layer so as to allow an electric current to pass through it without passing through said first active layer; and said third active layer of said third sub-pixel is arranged on a second side of said first active layer, opposite to said first side, and configured to emit a light at said third wavelength when it is excited by the light at the first wavelength emitted by said first active layer of said third sub-pixel, said third sub-pixel also comprising a fifth and a sixth electrode arranged on different sides of said first active layer so as to allow an electric current to pass through it, the method comprising the following steps; a) procuring a semi-conducting structure comprising a stack of semi-conducting epitaxial layers deposited on a substrate, said stack comprising, starting from said substrate;
a first subset of semi-conducting layers comprising at least one photoluminescent layer defining a third active layer configured to emit a light at a third wavelength, said layers exhibiting a doping of one and the same type;
a second subset of semi-conducting layers forming a light-emitting diode comprising an electroluminescent layer defining a first active layer configured to emit a light at a first wavelength; and
a third subset of semi-conducting layers forming a light-emitting diode comprising an electroluminescent layer defining a second active layer configured to emit a light at a second wavelength;
said first, second and third wavelengths being mutually different and said first wavelength being less than said second and third wavelengths;b) etching said structure to define a first, a second and a third pads to form respective sub-pixels, the etching extending at least through said first and second active layers; c) etching said first pad and said third pad, but not said second pad, so as to remove said second active layer therefrom; d) producing a pair of electrical contacts situated on different sides of said second active layer of said third, and two pairs of electrical contacts situated on different sides of said first active layer of said first and second pads; e) removing said substrate; and f) etching the structure so as to remove said third active layer in correspondence with said first and second pads, but not with said third pad.
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Specification