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Semiconductor device and method for manufacturing the same

  • US 10,103,272 B2
  • Filed: 10/19/2015
  • Issued: 10/16/2018
  • Est. Priority Date: 12/11/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate;

    an oxide semiconductor layer over the substrate;

    a gate insulating layer over the oxide semiconductor layer;

    a gate electrode over the gate insulating layer;

    an insulating layer over the gate electrode;

    a first wiring electrically connected to the gate electrode through a first contact hole which is provided in the insulating layer;

    a second wiring electrically connected to a first region of the oxide semiconductor layer through a second contact hole which is provided in the gate insulating layer and the insulating layer; and

    a third wiring electrically connected to a second region of the oxide semiconductor layer through a third contact hole which is provided in the gate insulating layer and the insulating layer,wherein a nitrogen concentration in the oxide semiconductor layer is 1×

    1018 atoms/cm3 or less.

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