Semiconductor device
First Claim
1. A method for manufacturing a semiconductor device, comprising:
- forming a first electrode over a substrate;
forming a first insulating film over the first electrode;
forming an oxide semiconductor film over the first insulating film;
forming a second insulating film over the oxide semiconductor film so that the second insulating film covers an edge of the oxide semiconductor film;
forming a third insulating film on the second insulating film;
forming a pair of opening portions in the second insulating film and the third insulating film; and
forming a pair of electrodes over the third insulating film so that the pair of electrodes is respectively in contact with the oxide semiconductor film through the pair of opening portions,wherein the second insulating film is in contact with a top surface of a region between the pair of electrodes of the oxide semiconductor film, a side edge of an end portion of the oxide semiconductor film and the first insulating film.
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Accused Products
Abstract
A highly reliable semiconductor device which uses an oxide semiconductor film for a backplane is provided. A semiconductor device includes a first conductive film, a first insulating film over the first conductive film, an oxide semiconductor film which is over the first insulating film and overlaps with the first conductive film, a second insulating film over the oxide semiconductor film, and a pair of second conductive films electrically connected to the oxide semiconductor film through an opening portion included in the second insulating film. The second insulating film overlaps with a region of the oxide insulating film in which a carrier flows between the pair of second conductive films and overlaps with end portions of the oxide semiconductor film.
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Citations
19 Claims
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1. A method for manufacturing a semiconductor device, comprising:
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forming a first electrode over a substrate; forming a first insulating film over the first electrode; forming an oxide semiconductor film over the first insulating film; forming a second insulating film over the oxide semiconductor film so that the second insulating film covers an edge of the oxide semiconductor film; forming a third insulating film on the second insulating film; forming a pair of opening portions in the second insulating film and the third insulating film; and forming a pair of electrodes over the third insulating film so that the pair of electrodes is respectively in contact with the oxide semiconductor film through the pair of opening portions, wherein the second insulating film is in contact with a top surface of a region between the pair of electrodes of the oxide semiconductor film, a side edge of an end portion of the oxide semiconductor film and the first insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor device, comprising:
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forming a first electrode over a substrate; forming a first insulating film over the first electrode; forming an oxide semiconductor film over the first insulating film; forming a second insulating film on the oxide semiconductor film so that the second insulating film covers an edge of the oxide semiconductor film; forming a third insulating film on the second insulating film; forming a pair of opening portions in the second insulating film and the third insulating film; and forming a pair of electrodes over the third insulating film so that the pair of electrodes is respectively in contact with the oxide semiconductor film through the pair of opening portions, wherein the second insulating film is in contact with a top surface of a region between the pair of electrodes of the oxide semiconductor film, a side edge of an end portion of the oxide semiconductor film and the first insulating film. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A method for manufacturing a semiconductor device, comprising:
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forming a first electrode over a substrate; forming a first insulating film over the first electrode; forming an oxide semiconductor film over the first insulating film; forming a second insulating film over the oxide semiconductor film so that the second insulating film is in contact with an edge of the oxide semiconductor film; forming a third insulating film on the second insulating film; forming a pair of opening portions in the second insulating film and the third insulating film; and forming a pair of electrodes over the third insulating film so that the pair of electrodes is respectively in contact with the oxide semiconductor film through the pair of opening portions, wherein the second insulating film covers a top surface of a region between the pair of electrodes of the oxide semiconductor film, a side edge of an end portion of the oxide semiconductor film and a part of the first insulating film. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification