Low power voltage level shifter circuit

• US 10,103,732 B1
• Filed: 10/04/2017
• Issued: 10/16/2018
• Est. Priority Date: 10/04/2017
• Status: Active Grant

• Current Assignee: Synopsys Incorporated
• Original Assignee: Synopsys Incorporated
• Inventors: Bill, Colin Stewart
• Primary Examiner(s): Le, Don
• Application Number:
  US15/724,861
• Time in Patent Office: 377 Days
• Field of Search: 326 81
• CPC Class Codes: H03K 19/0013 in field effect transistor circuits
• CPC Class Codes: H03K 19/018521 of complementary type, e.g. CMOS

Abstract

A low power voltage level shifter circuit in which current is limited through at least one of a plurality of CMOS logic circuits, one of which receives input signals within a first voltage level and is connected between a first upper and lower power supply, a second of which transmits shifted output signals within a second voltage level and is connected between a second upper and lower power supply. There is at least one current-limiting MOS transistor connected between at one of the CMOS logic circuits and one of its power supplies. Typically, there is at least one current-limiting MOS transistor between the second CMOS logic circuit which transmits the shifted output signals which have a larger range than that of the input signals. A second current through the at least one current-limiting MOS transistor mirrors a set current through a first MOS transistor so that power consumed by the CMOS logic circuit during switching is limited.

Claims

1. A voltage level shifter circuit comprising:

a first MOS (metal-oxide-semiconductor) transistor having a set current passing through the first MOS transistor;

a first CMOS (complementary metal-oxide-semiconductor) logic circuit receiving input signals within a first voltage level and connected between a first upper power supply and a first lower power supply;

a second CMOS logic circuit transmitting shifted output signals, the shifted output signals within a second voltage level, and directly connected between at least two current-limiting MOS transistors and a second upper power supply or a second lower power supply; and

the at least two current-limiting MOS transistors connected between the second CMOS logic circuit and the second upper power supply or the second lower power supply, currents through the current-limiting MOS transistors mirroring the set current through the first MOS transistor.

2. The voltage level shifter circuit of claim 1, wherein a signal range of the second voltage level is larger than a signal range of the first voltage level.

3. The voltage level shifter circuit of claim 1, wherein the first and second lower power supplies are at equal voltages and the current-limiting MOS transistors are connected between the second upper power supply and the second CMOS logic circuit.

4. The voltage level shifter circuit of claim 1, wherein the current-limiting MOS transistors are connected as a current mirror with respect to the first MOS transistor and the current through the first MOS transistor is set so that a bias voltage applied on gates of the current-limiting MOS transistors ensures that the current-limiting MOS transistors operate near cut-off or in subsystem-threshold modes.

5. The voltage level shifter circuit of claim 4, wherein the bias voltage is ±

100 mV about a threshold voltage V_T of the current-limiting MOS transistors.

6. The voltage level shifter circuit of claim 4, wherein the bias voltage is such that the current-limiting MOS transistors operate in sub-threshold modes.

7. The voltage level shifter circuit of claim 1, wherein the first MOS transistor and the current-limiting MOS transistors are matched and connected so that a voltage on a gate of the first MOS transistor is the same as a voltage on gates of the current-limiting MOS transistors, and the set current through the first MOS transistor matches the currents through the current-limiting MOS transistors.

8. The voltage level shifter circuit of claim 1, wherein the first MOS transistor and the current-limiting MOS transistors are connected to the second upper power supply and gates of the first MOS transistor and the current-limiting MOS transistors are connected together.

9. The voltage level shifter circuit of claim 1, wherein the second CMOS logic circuit comprises a voltage level driver and latch block, and the at least two current-limiting MOS transistors are connected between the voltage level driver and latch block and the second upper power supply.

10. The voltage level shifter circuit of claim 9, wherein a signal range of the second voltage level is larger than a signal range of the first voltage level.

11. The voltage level shifter circuit of claim 1, wherein the first MOS transistor is connected between the second upper power supply and a current source/sink.

12. The voltage level shifter circuit of claim 11, wherein the current source/sink comprises a plurality of series-connected MOS transistors with gates connected to a voltage reference.

13. The voltage level shifter circuit of claim 12, wherein the voltage reference comprises a common power supply.

14. The voltage level shifter circuit of claim 13, wherein the common power supply comprises the first upper power supply.

15. The voltage level shifter circuit of claim 1, wherein the voltage level shifter circuit is part of an integrated circuit having an area equal to or smaller than 2800 μ

m².

16. A method of operating a voltage level shifter circuit, the voltage level shifter circuit having a first CMOS (complementary metal-oxide-semiconductor) logic circuit receiving input signals within a first voltage level, and a second CMOS logic circuit transmitting shifted output signals within a second voltage level, the method comprising:

generating a set current;

passing the set current through a first MOS (metal-oxide-semiconductor) transistor;

mirroring the set current through the first MOS transistor with currents through at least two current-limiting MOS transistors; and

driving the second CMOS logic circuit with the currents, the second CMOS logic circuit directly connected between the at least two current-limiting MOS transistors and a first upper power supply or a first lower power supply.

17. The method of claim 16, wherein generating the set current comprises:

sinking the set current from the first MOS transistor to a second lower power supply by a plurality of series-connected MOS transistors, each having a gate connected to a second upper power supply.

18. The method of claim 17, wherein generating the set current further comprises:

setting a magnitude of the set current by a number of the series-connected MOS transistors.

19. The method of claim 18, wherein setting the magnitude comprises:

setting the set current such that a voltage on gates of the current-limiting MOS transistors ensures that the current-limiting MOS transistors operate close to cut-off or in sub-threshold modes.

20. The method of claim 19, wherein setting the magnitude further comprises:

setting the set current such that the voltage on the gates of the current-limiting MOS transistors is ±

100 mV about a threshold voltage V_T of the current-limiting MOS transistors.

21. The method of claim 19, wherein setting the magnitude further comprises:

setting the set current such that the voltage on the gates of the current-limiting MOS transistors ensures that the current-limiting MOS transistors operate in sub-threshold modes.

22. The method of claim 16, wherein the voltage level shifter circuit is part of an integrated circuit having an area equal to or smaller than 2800 μ

m².

23. The method of claim 16, wherein the second CMOS logic circuit comprises a voltage level driver and latch block.

24. An integrated circuit voltage level shifter circuit comprising:

a first voltage level logic circuit receiving signals within a first voltage level, the first voltage level logic circuit operating within the first voltage level and connected to a first voltage power supply;

a shifting logic circuit receiving signals from the first voltage level logic circuit and shifting first logic level signals to second logic level signals;

a second voltage level logic circuit receiving shifted signals from the shifting logic circuit, the second voltage level logic circuit operating within a second voltage level and connected to a second voltage power supply;

a bias voltage generator circuit; and

two current-limiting MOS (metal-oxide-semiconductor) transistors connected between the second voltage level logic circuit and the second voltage power supply, the current-limiting MOS transistors responsive to a bias voltage from the bias voltage generator circuit to provide limited currents through the second voltage level logic circuit to limit an amount of power consumed by the second voltage level logic circuit during switching.

25. The voltage level shifter circuit of claim 24, wherein the bias voltage generator circuit comprises a first MOS transistor and a current source/sink, an amount of current generated by the current source/sink through the first MOS transistor setting the bias voltage.

26. The voltage level shifter circuit of claim 25, wherein a range of the second voltage level signals is larger than a range of the first voltage level signals.

27. The voltage level shifter circuit of claim 25, wherein the current source/sink comprises a plurality of MOS transistors connected in series.

28. The voltage level shifter circuit of claim 24, wherein each of the two current-limiting MOS transistors is arranged as a current mirror of a first MOS transistor.

29. The voltage level shifter circuit of claim 28, wherein a current through the first MOS transistor is set so that the bias voltage is applied on a gate of each of the two current-limiting MOS transistors so that each of the two current-limiting MOS transistors operates close to its cut-off or in sub-threshold modes.

30. The voltage level shifter circuit of claim 29, wherein the bias voltage is ±

100 mV about a threshold voltage V_T of each of the two current-limiting MOS transistors.

31. The voltage level shifter circuit of claim 29, wherein the bias voltage is such that each of the two current-limiting MOS transistors operates in its sub-threshold mode.

32. The voltage level shifter circuit of claim 24, wherein the voltage level shifter circuit is part of an integrated circuit having an area equal to or smaller than 2800 μ

m².