Method for treating surface of semiconductor layer, semiconductor substrate, method for making epitaxial substrate
First Claim
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1. A method for making an epitaxial substrate, comprising:
- a step of growing a first layer on a substrate in a growth reactor, the first layer being made of one of gallium nitride (GaN), aluminum gallium nitride (AlGaN) and indium aluminum nitride (InAlN);
a step of growing a second layer made of gallium nitride compound on a surface of the first layer continuously in the growth reactor, the second layer being in contact with the first layer, and the gallium nitride compound of the second layer having a composition ratio of gallium to nitrogen larger than 2;
a step of taking the substrate out of the growth reactor after the step of growing the second layer; and
a step of exposing the first layer by etching the second layer after the step of taking the substrate out of the growth reactor;
wherein the step of growing the second layer accompanies with an accreting particle of gallium on the second layer after the step of growing the second layer, andwherein the step of exposing the first layer removes the accreting particle of gallium on the second layer.
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Abstract
A surface treatment method for a semiconductor layer includes growing a first layer on a substrate in a growth reactor, the first layer consisting of one of gallium nitride, aluminum gallium nitride and indium aluminum nitride; growing a second layer of gallium nitride on a surface of the first layer, the gallium nitride of the second GaN layer having a composition ratio of gallium to nitrogen larger than 2; taking the substrate out of the growth reactor after growing the second layer; and removing the second layer after taking the substrate out of the growth reactor.
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4 Claims
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1. A method for making an epitaxial substrate, comprising:
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a step of growing a first layer on a substrate in a growth reactor, the first layer being made of one of gallium nitride (GaN), aluminum gallium nitride (AlGaN) and indium aluminum nitride (InAlN); a step of growing a second layer made of gallium nitride compound on a surface of the first layer continuously in the growth reactor, the second layer being in contact with the first layer, and the gallium nitride compound of the second layer having a composition ratio of gallium to nitrogen larger than 2; a step of taking the substrate out of the growth reactor after the step of growing the second layer; and a step of exposing the first layer by etching the second layer after the step of taking the substrate out of the growth reactor; wherein the step of growing the second layer accompanies with an accreting particle of gallium on the second layer after the step of growing the second layer, and wherein the step of exposing the first layer removes the accreting particle of gallium on the second layer. - View Dependent Claims (2, 3, 4)
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