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Semiconductor device and manufacturing method thereof

  • US 10,109,500 B2
  • Filed: 07/31/2017
  • Issued: 10/23/2018
  • Est. Priority Date: 12/04/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode;

    a gate insulating film over the gate electrode;

    an oxide semiconductor layer formed by sputtering over the gate insulating film;

    a source electrode and a drain electrode over the oxide semiconductor layer; and

    an insulating film over the oxide semiconductor layer, the source electrode, and the drain electrode,wherein a portion of the oxide semiconductor layer located between the source electrode and the drain electrode is thinner than portions of the oxide semiconductor layer below the source electrode and the drain electrode,wherein a superficial portion of at least the portion of the oxide semiconductor layer located between the source electrode and the drain electrode includes a crystal region,wherein a c-axis of the crystal region is aligned in a direction which is substantially perpendicular to a top surface of the oxide semiconductor layer, andwherein the oxide semiconductor layer includes indium, gallium, and zinc.

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