Formation of advanced interconnects including a set of metal conductor structures in a patterned dielectric layer

• US 10,109,585 B2
• Filed: 02/03/2017
• Issued: 10/23/2018
• Est. Priority Date: 08/17/2016
• Status: Active Grant

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Edelstein, Daniel C, Yang, Chih-Chao
• Primary Examiner(s): Mazumder, Didarul
• Application Number:
  US15/424,753
• Publication Number:
  US 20180053727A1
• Time in Patent Office: 627 Days
• Field of Search: 257752, 438626, 438631, 438645
• CPC Class Codes: H01L 21/2855 by physical means, e.g. sputtering, evaporation H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/28568 the conductive layers comprising transition metals H01L21/28518 takes precedence
• CPC Class Codes: H01L 21/3212 by chemical mechanical polishing [CMP]
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76826 by contacting the layer with gases, liquids or plasmas
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 21/7684 Smoothing; Planarisation
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76846 Layer combinations
• CPC Class Codes: H01L 21/76855 After-treatment introducing at least one additional element into the layer
• CPC Class Codes: H01L 21/76856 by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
• CPC Class Codes: H01L 21/76858 by diffusing alloying elements
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/528 Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 23/53209 based on metals, e.g. alloys, metal silicides H01L23/53285 takes precedence
• CPC Class Codes: H01L 23/53223 Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53247 Noble-metal alloys
• CPC Class Codes: H01L 23/53252 Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53261 : Refractory-metal alloys
• CPC Class Codes: H01L 23/53266 : Additional layers associated with refractory-metal layers, e.g. adhesion, barrier, cladding layers

Abstract

An integrated circuit device includes a substrate including a patterned dielectric layer. The pattern includes a set of features in the dielectric for a set of metal conductor structures. An adhesion promoting layer is disposed over the set of features in the patterned dielectric. A ruthenium cobalt alloy layer is disposed over the adhesion promoting layer. A metal layer is disposed over the ruthenium cobalt alloy layer filling the set of features.

Claims

1. An integrated circuit device comprising:

a substrate including a dielectric layer patterned with a pattern which includes a set of features in the dielectric layer for a set of metal conductor structures;

an adhesion promoting layer disposed on the set of features in the patterned dielectric layer;

a ruthenium cobalt alloy layer disposed on the adhesion promoting layer; and

a metal layer disposed on the ruthenium cobalt alloy layer filling the set of features;

wherein a higher concentration of ruthenium layer is found on an adhesion promoting layer side of the ruthenium cobalt alloy layer than on a metal layer side of the ruthenium cobalt alloy layer.

2. The device as recited in claim 1, wherein the metal layer comprises a metal which has a lower resistivity than cobalt at a first dimension.

3. The device as recited in claim 1, wherein the depositions of ruthenium and cobalt are performed by a physical vapor deposition process and a thickness of the ruthenium cobalt alloy layer is equal to 1 Angstrom.

4. The device as recited in claim 1, wherein the adhesion promoting layer is comprised of a nitrogen enriched layer produced by a nitridation process and a liner layer comprised of one or more materials selected from the group consisting of Ta, Ti, W, TaN, TiN and WN.

5. The device as recited in claim 1, wherein the set of metal conductor structures is a set of conductive lines.

6. The device as recited in claim 1, wherein a top surface of the metal layer fills in the set of metal conductor structures is coplanar with a top surface of the dielectric layer in field areas of the dielectric layer.

7. The device as recited in claim 1, wherein the set of metal conductor structures is a set of conductive vias.

8. The device as recited in claim 1, wherein the set of metal conductor structures is a set of conductive lines and a set of vias.

9. The device as recited in claim 1, wherein the higher concentration of ruthenium layer is between and in contact with both the ruthenium cobalt alloy layer and the adhesion promoting layer.

10. The device as recited in claim 1, wherein the ruthenium cobalt alloy layer thickness is less than 5 Angstroms.

11. An integrated circuit device comprising:

a substrate including a dielectric layer patterned with a pattern which includes a set of features in the dielectric layer for a set of metal conductor structures;

a nitrogen containing adhesion promoting layer disposed on the set of features in the patterned dielectric layer;

a liner layer disposed on the nitrogen containing adhesion promoting layer;

a ruthenium cobalt alloy layer disposed on the liner layer; and

a metal layer disposed on the ruthenium cobalt alloy layer filling the set of features, wherein the metal layer comprises a metal which has a lower resistivity than cobalt at a first dimension less than 30 nm;

wherein a higher concentration of ruthenium layer is found on a nitrogen containing adhesion promoting layer side of the ruthenium cobalt alloy layer than on a metal layer side of the ruthenium cobalt alloy layer.

12. The device as recited in claim 11 wherein the nitrogen containing adhesion promoting layer is a nitridized surface of the dielectric layer.

13. The device as recited in claim 11 wherein a thickness of the ruthenium cobalt alloy layer is equal to 1 Angstrom.

14. The device as recited in claim 11, wherein the higher concentration of ruthenium layer is between and in contact with the ruthenium cobalt ahoy layer and the nitrogen containing adhesion promoting layer.

15. The device as recited in claim 11, wherein the metal layer is selected from the group of Ni and Ir.