Crystalline multilayer oxide thin films structure in semiconductor device

• US 10,109,707 B2
• Filed: 12/19/2014
• Issued: 10/23/2018
• Est. Priority Date: 03/31/2014
• Status: Active Grant

• Current Assignee: Filosofia Inc.
• Original Assignee: Filosofia Inc.
• Inventors: Hitora, Toshimi, Oda, Masaya
• Primary Examiner(s): Mazumder, Didarul
• Application Number:
  US14/577,917
• Publication Number:
  US 20150279927A1
• Time in Patent Office: 1,404 Days
• Field of Search: 257 43, 438 85, 438 86, 438104, 438754
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02628 using solutions
• CPC Class Codes: H01L 21/477 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/38 - H01L21/449 and H01L21/461 - H01L21/475 take precedence
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/26 including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24 , e.g. alloys
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H01L 29/8611 Planar PN junction diodes
• CPC Class Codes: H01L 29/872 Schottky diodes

Abstract

Provided is a highly conductive crystalline multilayer structure including a corundum-structured crystalline oxide thin film whose resistance has not increased even after annealing (heating). The crystalline multilayer structure includes a base substrate and the corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide thin film is 1 μm or more in a thickness and 80 mΩcm or less in an electrical resistivity. A semiconductor device includes the crystalline multilayer structure.

Claims

1. A crystalline multilayer structure comprising:

a base substrate, wherein the base substrate is a c-plane sapphire substrate; and

two corundum-structured crystalline oxide thin films having different properties and disposed on the base substrate, wherein

at least one of the two corundum-structured crystalline oxide thin films has a thickness of 1 μ

m or more and an electrical resistivity of 80 mΩ

cm or less,

the at least one of the two corundum-structured crystalline oxide thin films comprises metal elements that contain allium (Ga) and the at least one of the two corundum-structured crystalline oxide thin films is with an atomic ratio of gallium (Ga) to all of the metal elements comprised in the at least one of the two corundum-structured crystalline oxide thin films being 0.5 or more.

2. The crystalline multilayer structure of claim 1, wherein one or both of the two corundum-structured crystalline oxide thin film comprises at least gallium.

3. The crystalline multilayer structure of claim 1, wherein a surface roughness (Ra) of one or both of the two corundum-structured crystalline oxide thin films is 0.1 μ

m or less.

4. The crystalline multilayer structure of claim 1, wherein the thickness of the at least one of the corundum-structured crystalline oxide thin films is 1 to 20 μ

m.

5. The crystalline multilayer structure of claim 1, wherein

one of the two corundum-structured crystalline oxide thin films is disposed on the base substrate.

6. The crystalline multilayer structure of claim 1, wherein

the at least one of the two corundum-structured crystalline oxide thin films comprises metal elements that contain indium (In), aluminum (Al), gallium (Ga), and Fe (iron) with a composition of In_XAl_YGa_ZFe_VO₃ that fills 0<

X<

2.5, 0<

Y<

2.5, 0<

Z<

2.5, 0<

V<

2.5, and X+Y+Z+V=1.5 to 2.5.

7. A method for manufacturing a crystalline multilayer structure comprising a corundum-structured crystalline oxide thin film, the method comprising:

forming two corundum-structured crystalline oxide thin films from raw-material fine particles on a base substrate disposed in a film-forming chamber, wherein the forming comprises;

generating raw-material fine particles by atomizing a raw-material solution, and

carrying the raw-material fine particles into a film-forming chamber by carrier gas, and

annealing the two corundum-structured crystalline oxide thin films after the forming of the two corundum-structured crystalline oxide thin films;

wherein the base substrate is a c-plane sapphire substrate and at least one of the two corundum-structured crystalline oxide thin films has a thickness of 1 μ

m or more and an electrical resistivity of 80 mΩ

cm or less,

the at least one of the two corundum-structured crystalline oxide thin films comprises metal elements that contain gallium and the at least one of the two corundum-structured crystalline oxide thin films is with an atomic ratio of gallium to all of the metal elements comprised in the at least one of the two corundum-structured crystalline oxide thin films being 0.5 or more.

8. The method according to claim 7, wherein the at least one of the two corundum-structured crystalline oxide thin films is formed with the thickness of 1 to 20 μ

m.

9. The method according to claim 7, wherein the two corundum-structured crystalline oxide thin films are annealed at 600°

C or less.

10. A semiconductor device comprising:

a base substrate; and

a corundum-structured crystalline oxide film comprising metal elements that contain gallium (Ga) and disposed on the base substrate,

the corundum-structured crystalline oxide film having a thickness of 1 μ

m or more and an electrical resistivity of 80 mΩ

cm or less, and

the corundum-structured crystalline oxide film with an atomic ratio of gallium (Ga) to all of the metal elements comprised in the corundum-structured crystalline oxide film being 0.5 or more.

11. The semiconductor device of claim 10, wherein

the corundum-structured crystalline oxide film comprising a first film and a second film laminated on the first film.

12. The semiconductor device of claim 10, wherein

the base substrate is a corundum-structured substrate.

13. The semiconductor device of claim 12, wherein

the base substrate that is the corundum-structured substrate is a c-plane sapphire substrate.

14. The semiconductor device of claim 11, wherein

the second film comprised in the corundum-structured crystalline oxide film is an insulating film.

15. The semiconductor device of claim 10, wherein

the first film comprised in the corundum-structured crystalline oxide film is a conductive film.

16. The semiconductor device of claim 15, wherein

the first film comprised in the corundum-structured crystalline oxide film contains at least one selected from Ge, Sn, Si, Ti, Zr, and Hf.

17. The semiconductor device of claim 10, wherein

the metal elements comprised in the corundum-structured crystalline oxide film further comprises indium (In), aluminum (Al), and Fe (iron) with a composition of In_XAl_YGa_ZFe_VO₃ that fills 0<

X<

2.5, 0<

Y<

2.5, 0<

Z<

2.5, 0<

V<

2.5, and X+Y+Z+V=1.5 to 2.5.