Trench power MOSFET

• US 10,109,732 B2
• Filed: 07/27/2016
• Issued: 10/23/2018
• Est. Priority Date: 06/01/2012
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Ng, Chun-Wai, Chou, Hsueh-Liang, Liu, Ruey-Hsin, Su, Po-Chih
• Primary Examiner(s): Bradley, Stephen
• Application Number:
  US15/220,669
• Publication Number:
  US 20160351691A1
• Time in Patent Office: 818 Days
• CPC Class Codes: H01L 21/02233 of the semiconductor substrate or a semiconductor layer
• CPC Class Codes: H01L 21/26586 characterised by the angle between the ion beam and the crystal planes or the main crystal surface
• CPC Class Codes: H01L 21/266 using masks H01L21/26586 takes precedence
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/0882 Disposition
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/4916 the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/495 the conductor material next to the insulator being a simple metal, e.g. W, Mo H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/66727 with a step of recessing the source electrode
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A device includes a semiconductor region of a first conductivity type, a trench extending into the semiconductor region, and a conductive field plate in the trench. A first dielectric layer separates a bottom and sidewalls of the field plate from the semiconductor region. A main gate is disposed in the trench and overlapping the field plate. A second dielectric layer is disposed between and separating the main gate and the field plate from each other. A Doped Drain (DD) region of the first conductivity type is under the second dielectric layer, wherein an edge portion of the main gate overlaps the DD region. A body region includes a first portion at a same level as a portion of the main gate, and a second portion at a same level as, and contacting, the DD region, wherein the body region is of a second conductivity type opposite the first conductivity type.

Claims

1. A device comprising:

a semiconductor region of a first conductivity type;

a trench extending into the semiconductor region;

a field plate in the trench, wherein the field plate is conductive;

a first dielectric layer separating a bottom and sidewalls of the field plate from the semiconductor region;

a main gate in the trench, the main gate comprising;

a first portion overlapping the field plate and the first dielectric layer; and

a second portion, wherein an edge of the second portion contacts an edge of the first portion to form a distinguishable interface;

a second dielectric layer between and separating the main gate and the field plate from each other; and

a Doped Drain (DD) region of the first conductivity type, wherein the second portion of the main gate overlaps the DD region, wherein an entirety of the DD region is below a bottom surface of the main gate and higher than a bottom surface of the field plate, and wherein an inner edge of the second portion of the main gate is substantially vertically aligned to a vertical interface between the DD region and the first dielectric layer.

2. The device of claim 1, wherein both the first portion and the second portion of the main gate comprise polysilicon.

3. The device of claim 1, wherein the first portion of the main gate comprises polysilicon, and the second portion of the main gate comprises a metal.

4. The device of claim 1, wherein the distinguishable interface is flush with an additional interface between the first dielectric layer and the semiconductor region, and the second portion extends below a bottom end of the distinguishable interface.

5. The device of claim 1, wherein the second portion overlaps the DD region.

6. The device of claim 5, wherein the distinguishable interface is a substantially vertical interface.

7. The device of claim 1 further comprising:

a body region with a portion at a same level as a portion of the main gate, wherein the body region is of a second conductivity type opposite to the first conductivity type; and

an oxide layer separating the second portion of the main gate from the body region.

8. The device of claim 7, wherein the body region further comprises:

a second portion overlapped by, and contacting, a bottom surface of the oxide layer.

9. The device of claim 1, wherein an outer vertical edge of the first dielectric layer is substantially vertically aligned to the distinguishable interface.

10. The device of claim 7, wherein the portion of the body region contacts the DD region to form a substantially vertical interface with the DD region, and the substantially vertical interface is substantially aligned to an outer edge of the main gate.

11. A device comprising:

a semiconductor region of a first conductivity type;

a first dielectric layer extending into the semiconductor region;

a field plate in the first dielectric layer, wherein the first dielectric layer comprises a bottom portion underlying the field plate, and a first sidewall portion and a second sidewall portion on opposite sidewalls of the field plate;

a main gate comprising;

a first portion overlapping the field plate and the first dielectric layer; and

a second portion on a side of, and in contact with, the first portion, wherein the second portion extends horizontally beyond the field plate and both the first sidewall portion and the second sidewall portion of the first dielectric layer, and an edge of the second portion of the main gate contacts an edge of the first portion of the main gate to form a first substantially vertical distinguishable interface;

a second dielectric layer between and separating the main gate and the field plate from each other; and

a Doped Drain (DD) region of the first conductivity type contacting a sidewall of the first dielectric layer, wherein the second portion of the main gate overlaps the DD region, and a second substantially vertical interface between the first dielectric layer and the DD region is substantially vertically aligned to the first substantially vertical distinguishable interface.

12. The device of claim 11, further comprising:

a metal-containing drain region underlying and electrically coupling to the semiconductor region; and

a metal-containing source region comprising a portion overlapping the main gate.

13. The device of claim 11, wherein both the first portion and the second portion of the main gate comprise polysilicon.

14. The device of claim 11, wherein the first portion of the main gate comprises polysilicon, and the second portion of the main gate comprises a metal.

15. The device of claim 11 further comprising:

a body region of a second conductivity type opposite to the first conductivity type; and

an oxide layer between and in contact with both the second portion of the main gate and a sidewall of the body region, wherein the body region comprises a portion overlapped by the oxide layer.

16. The device of claim 11, wherein the second portion of the main gate extends lower than the first portion of the main gate.

17. The device of claim 11, wherein the field plate extends further into the semiconductor region than the DD region.

18. A device comprising:

a semiconductor region of a first conductivity type;

a trench extending into the semiconductor region;

a field plate in the trench, wherein the field plate is conductive;

a first dielectric layer separating a bottom and sidewalls of the field plate from the semiconductor region;

a main gate in the trench and overlapping the field plate, wherein the main gate extends laterally beyond edges of the first dielectric layer;

a second dielectric layer between and separating the main gate and the field plate from each other;

a Doped Drain (DD) region of the first conductivity type under the second dielectric layer; and

a body region comprising;

a first portion at a same level as a portion of the main gate, wherein the body region is of a second conductivity type opposite to the first conductivity type; and

a second portion at a same level as, and contacting, the DD region, wherein the second portion of the body region forms a substantially vertical interface with the DD region, with the substantially vertical interface substantially aligned to an outer edge of the main gate.

19. The device of claim 18, wherein an edge portion of the main gate overlaps the DD region.

20. The device of claim 18, wherein the main gate comprises:

a first portion overlapping the field plate and the first dielectric layer; and

a second portion comprising a sidewall in contact with the first portion, wherein the second portion forms a substantially vertical distinguishable interface with a sidewall of second dielectric layer, wherein the second portion extends laterally beyond a respective edge of the field plate.