Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device

• US 10,109,743 B2
• Filed: 06/09/2016
• Issued: 10/23/2018
• Est. Priority Date: 03/18/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koezuka, Junichi, Sato, Yuichi, Ohno, Shinji
• Primary Examiner(s): Wright, Tucker J
• Application Number:
  US15/177,447
• Publication Number:
  US 20160284864A1
• Time in Patent Office: 866 Days
• CPC Class Codes: G02F 1/136204 Arrangements to prevent high voltage or static electricity failures
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/0259 Microstructure
• CPC Class Codes: H01L 21/265 producing ion implantation
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10B 99/00 Subject matter not provided for in other groups of this subclass

Abstract

A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.

Claims

1. A semiconductor device comprising:

an oxide semiconductor film including a channel region, a source region, and a drain region;

a gate electrode; and

a gate insulating film between the oxide semiconductor film and the gate electrode,

wherein at least one of the source region and the drain region includes a plurality of low density regions having a lower density than a region between adjacent ones of the plurality of low density regions,

wherein the at least one of the source region and the drain region includes hydrogen, and

wherein the channel region does not include a low density region.

2. The semiconductor device according to claim 1,

wherein diameters of the plurality of low density regions are larger than or equal to 0.1 nm and smaller than or equal to 10 nm.

3. The semiconductor device according to claim 1,

wherein the at least one of the source region and the drain region contains hydrogen at a higher concentration than the channel region.

4. The semiconductor device according to claim 1,

wherein the oxide semiconductor film comprises indium.

5. The semiconductor device according to claim 1,

wherein the source region and the drain region contain hydrogen having a concentration higher than or equal to 1×

10²⁰ cm<sup>−

3</sup> and lower than or equal to 3×

10²² cm<sup>−

3</sup>.

6. The semiconductor device according to claim 5,

wherein a hydrogen concentration in the channel region is lower than 5×

10¹⁸ cm<sup>−

3</sup>.

7. A semiconductor device comprising:

an oxide semiconductor film including a channel region, a source region, and a drain region;

a gate electrode; and

a gate insulating film between the oxide semiconductor film and the gate electrode,

wherein the source region and the drain region include a first region and a second region,

wherein the first region has lower density than the second region,

wherein the at least one of the source region and the drain region includes hydrogen, and

wherein the channel region does not include a third region whose density is lower than a region which is adjacent to the third region.

8. The semiconductor device according to claim 7,

wherein a diameter of the first region is larger than or equal to 0.1 nm and smaller than or equal to 10 nm.

9. The semiconductor device according to claim 7,

wherein the at least one of the source region and the drain region contains hydrogen at a higher concentration than the channel region.

10. The semiconductor device according to claim 7,

wherein the oxide semiconductor film comprises indium.

11. The semiconductor device according to claim 7,

wherein the second region comprises a crystal portion in contact with a peripheral portion of the first region.

12. The semiconductor device according to claim 7,

wherein the source region and the drain region contain hydrogen having a concentration higher than or equal to 1×

10²⁰ cm<sup>−

3</sup> and lower than or equal to 3×

10²² cm<sup>−

3</sup>.

13. The semiconductor device according to claim 12,

wherein a hydrogen concentration in the channel region is lower than 5×

10¹⁸ cm<sup>−

3</sup>.

14. A semiconductor device comprising:

an oxide semiconductor film including a channel region, a source region, and a drain region;

a gate electrode; and

a gate insulating film between the oxide semiconductor film and the gate electrode,

wherein the source region and the drain region include a first region and second region,

wherein the first region is an empty space,

wherein the at least one of the source region and the drain region includes hydrogen, and

wherein the channel region does not include an empty space.

15. The semiconductor device according to claim 14,

wherein a diameter of the first region is larger than or equal to 0.1 nm and smaller than or equal to 10 nm.

16. The semiconductor device according to claim 14,

wherein the at least one of the source region and the drain region contains hydrogen at a higher concentration than the channel region.

17. The semiconductor device according to claim 14,

wherein the oxide semiconductor film comprises indium.

18. The semiconductor device according to claim 14,

wherein the second region comprises a crystal portion in contact with a peripheral portion of the first region.

19. The semiconductor device according to claim 14,

wherein the source region and the drain region contain hydrogen having a concentration higher than or equal to 1×

10²⁰ cm<sup>−

3</sup> and lower than or equal to 3×

10²² cm<sup>−

3</sup>.

20. The semiconductor device according to claim 19,

wherein a hydrogen concentration in the channel region is lower than 5×

10¹⁸ cm<sup>−

3</sup>.