Semiconductor device
First Claim
1. A semiconductor device comprising:
- a semiconductor layer over a substrate;
a source electrode and a drain electrode over and electrically connected to the semiconductor layer;
a first insulating layer over the source electrode and the drain electrode; and
a pixel electrode electrically connected to the source electrode and the drain electrode,wherein one of the source electrode and the drain electrode comprises a first electrode layer and a second electrode layer on the first electrode layer,wherein the first electrode layer comprises titanium,wherein the second electrode layer comprises aluminum,wherein a first width of the first electrode layer is larger than a second width of the second electrode layer,wherein an upper surface of the second electrode layer is in contact with the first insulating layer,wherein the first electrode layer is in contact with the pixel electrode,wherein the semiconductor layer comprises an amorphous silicon, andwherein the pixel electrode comprises an ITO.
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Abstract
It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.
92 Citations
22 Claims
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1. A semiconductor device comprising:
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a semiconductor layer over a substrate; a source electrode and a drain electrode over and electrically connected to the semiconductor layer; a first insulating layer over the source electrode and the drain electrode; and a pixel electrode electrically connected to the source electrode and the drain electrode, wherein one of the source electrode and the drain electrode comprises a first electrode layer and a second electrode layer on the first electrode layer, wherein the first electrode layer comprises titanium, wherein the second electrode layer comprises aluminum, wherein a first width of the first electrode layer is larger than a second width of the second electrode layer, wherein an upper surface of the second electrode layer is in contact with the first insulating layer, wherein the first electrode layer is in contact with the pixel electrode, wherein the semiconductor layer comprises an amorphous silicon, and wherein the pixel electrode comprises an ITO. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a semiconductor layer over a substrate; an electrode or a wiring over and electrically connected to the semiconductor layer; a first insulating layer over the electrode or the wiring; and a pixel electrode electrically connected to the electrode or the wiring, wherein the electrode or the wiring comprises a first conductive layer and a second conductive layer on the first conductive layer, wherein the first conductive layer comprises titanium, wherein the second conductive layer comprises a low-resistant metal, wherein a first width of the first conductive layer is larger than a second width of the second conductive layer, wherein an upper surface of the second conductive layer is in contact with the first insulating layer, wherein the first conductive layer has a portion extending from an end portion of the second conductive layer, wherein at least a part of the extending portion of the first conductive layer is in contact with the pixel electrode, wherein the semiconductor layer comprises an amorphous silicon, and wherein the pixel electrode comprises an ITO. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15)
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16. A semiconductor device comprising:
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a semiconductor layer over a substrate; a first conductive layer comprising titanium, the first conductive layer being in contact with the semiconductor layer; a second conductive layer on the first conductive layer; a first insulating layer over the second conductive layer; and a third conductive layer comprising an ITO over the second conductive layer, the third conductive layer being in contact with an end portion and a part of a top surface of the second conductive layer, wherein the third conductive layer is in contact with the first conductive layer, wherein a first width of the first conductive layer is larger than a second width of the top surface of the second conductive layer, wherein the second conductive layer comprises a low-resistant metal, wherein the semiconductor layer comprises an amorphous silicon, and wherein an extending portion of the third conductive layer is a pixel electrode, and wherein the pixel electrode is provided over the first insulating layer. - View Dependent Claims (17, 18, 19)
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20. A semiconductor device comprising:
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a semiconductor layer over a substrate; a source electrode and a drain electrode over and electrically connected to the semiconductor layer; a first insulating layer over the source electrode and the drain electrode; and a pixel electrode electrically connected to the source electrode and the drain electrode, wherein one of the source electrode and the drain electrode comprises a first conductive layer and a second conductive layer on the first conductive layer, wherein the first conductive layer comprises titanium, wherein the second conductive layer comprises aluminum, wherein a first width of the first conductive layer is larger than a second width of the second conductive layer, wherein an upper surface of the second conductive layer is in contact with the first insulating layer, wherein the first conductive layer has a portion extending from an end portion of the second conductive layer, and wherein at least a part of the extending portion of the first conductive layer is in contact with the pixel electrode. - View Dependent Claims (21, 22)
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Specification