Printable inorganic semiconductor structures

• US 10,109,764 B2
• Filed: 09/15/2017
• Issued: 10/23/2018
• Est. Priority Date: 05/15/2015
• Status: Active Grant

• Current Assignee: X Display Company Technology Limited (Sensinnovat BVBA)
• Original Assignee: X-Celeprint Limited
• Inventors: Bower, Christopher, Meitl, Matthew, Gomez, David, Prevatte, Carl, Bonafede, Salvatore
• Primary Examiner(s): Blum, David S
• Application Number:
  US15/705,785
• Publication Number:
  US 20180006186A1
• Time in Patent Office: 403 Days
• Field of Search: 257 98, 438 27, 438455
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68318 Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• CPC Class Codes: H01L 2221/68322 Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: H01L 2224/24225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 29/7848 the means being located in the source/drain region, e.g. SiGe source and drain
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/26 Materials of the light emitting region
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.

Claims

1. A printable inorganic semiconductor structure comprising:

a semiconductor element having a substrate side and a handle side opposite the substrate side;

a first electrical contact on the handle side of the semiconductor element;

a second electrical contact on the substrate side of the semiconductor element;

an interlayer forming an anchor separated from and adjacent to the semiconductor element;

a handle substrate adhered to the interlayer; and

a tether bridging the substrate side of the semiconductor element to the anchor, thereby physically securing the semiconductor element to the anchor.

2. The structure of claim 1, wherein the handle substrate is a wafer.

3. The structure of claim 1, wherein the sacrificial layer comprises a material selected from the group consisting of Si (1 1 1), InAlP, InP, GaAs, InGaAs, AlGaAs, GaSb, GaAlSb, AlSb, InSb, InGaAlSbAs, InAlSb, and InGaP.

4. The structure of claim 1, wherein the semiconductor layer comprises multiple sub-layers.

5. The structure of claim 1, comprising protrusions on the first electrical contact.

6. The structure of claim 1, comprising one or more additional electrical contacts, wherein the semiconductor element, the first electrical contact, and the second electrical contact and the one or more additional electrical contacts form a transistor and integrated circuit.

7. The structure of claim 1, wherein the first electrical contact has a different thickness than the second electrical contact.

8. The structure of claim 1, wherein the first electrical contact and the second electrical contact extend to a common distance from a surface of the semiconductor element.

9. The structure of claim 1, wherein a portion of the semiconductor element is removed such that a portion of the first electrical contact is exposed.

10. The structure of claim 1, wherein the semiconductor structure has a width from 1-8 μ

m.

11. The structure of claim 1, wherein the semiconductor structure has a length from 5-10 μ

m.

12. The structure of claim 1, wherein the semiconductor structure has a height from 0.5-3 μ

m.

13. A wafer comprising a plurality of printable semiconductor structures, each printable semiconductor structure comprising

a semiconductor element having a substrate side and a handle side opposite the substrate side,

a first electrical contact on the handle side of the semiconductor element,

a second electrical contact on the substrate side of the semiconductor element,

an interlayer forming an anchor separated from and adjacent to the semiconductor element,

a handle substrate adhered to the interlayer, and

a tether bridging the substrate side of the semiconductor element to the anchor, thereby physically securing the semiconductor element to the anchor,

wherein the interlayer and handle substrate are common to each of the plurality of the printable semiconductor structures.

14. An array of printable inorganic semiconductor structures comprising:

a plurality of semiconductor elements, each having a substrate side and a handle side opposite the substrate side;

a plurality of first electrical contacts, each first electrical contract on the handle side of one of the semiconductor elements of the plurality of semiconductor elements;

a plurality of second electrical contacts, each second electrical contact on the substrate side of one of the semiconductor elements of the plurality of semiconductor elements;

an interlayer forming an anchor structure separated from and adjacent to the plurality of semiconductor elements, wherein the anchor structure comprises a plurality of anchors;

a handle substrate adhered to the interlayer; and

a plurality of tethers, each respective tether bridging the substrate side of one of the semiconductor elements of the plurality of semiconductor elements to one of the anchors of the plurality of anchors, thereby physically securing each semiconductor element to the anchor structure.

15. The array of inorganic semiconductor structures of claim 14, wherein:

each semiconductor element of the plurality of semiconductor elements, is surrounded by a trench of a plurality of trenches;

comprising a sacrificial layer covering the first electrical contact and covering the handle side of at least a portion of the plurality of semiconductor elements and filling a portion of the plurality of trenches;

wherein the interlayer is formed over the sacrificial layer, wherein a portion of the interlayer contacts the source substrate at a base of at least a portion of the plurality of trenches to form the anchor structure comprising a plurality of anchors; and

wherein at least a portion of the interlayer is between the handle substrate and the sacrificial layer.

16. A method of making an array of inorganic semiconductor structures suitable for micro-transfer printing, comprising:

providing a source substrate;

forming a semiconductor layer on the source substrate, wherein the semiconductor layer has a first side and a second side opposite the first side and adjacent to the substrate;

forming a plurality of first electrical contacts on the first side of the semiconductor layer opposite the source substrate;

removing a portion of the semiconductor layer surrounding each of the plurality of first electrical contacts to form a plurality of trenches, each surrounding a semiconductor element of a plurality of semiconductor elements made from the semiconductor layer, each semiconductor element having a substrate side in contact with the source substrate and a handle side opposite the substrate side;

providing a sacrificial layer covering the plurality of first electrical contact and covering at least a portion of the handle side of each of the plurality of semiconductor elements and filling only a portion of each of the plurality of trenches, exposing at least a portion of the source substrate at the base of each of the plurality of trenches;

providing an interlayer over the sacrificial layer, the interlayer having different chemical selectivity than the sacrificial layer, wherein a portion of the interlayer contacts the source substrate at the base of each of the plurality of trenches to form a plurality of anchors;

adhering the interlayer to a handle substrate;

removing the source substrate to expose the substrate side of each of the plurality of semiconductor elements;

forming a plurality of second electrical contacts, each second electrical contract on the exposed substrate side of one of the semiconductor elements of the plurality of semiconductor elements;

optionally forming a plurality of tethers, each tether bridging the exposed substrate side of one of the semiconductor elements of the plurality of semiconductor elements to one of the anchors of the plurality of anchors; and

removing the sacrificial layer, thereby forming an array of printable semiconductor structures partially released from the handle substrate and physically secured to a respective anchor by a corresponding tether.

17. A method of making an array of inorganic semiconductor structures suitable for micro-transfer printing, comprising:

providing a source substrate;

forming a semiconductor layer on the source substrate, wherein the semiconductor layer has a first side and a second side opposite the first side and adjacent to the substrate;

removing a portion of the semiconductor layer to form a plurality of trenches, each trench surrounding a semiconductor element of a plurality of semiconductor elements made from the semiconductor layer, each semiconductor element having a substrate side in contact with the source substrate and a handle side opposite the substrate side;

providing a sacrificial layer covering at least a portion of the handle side of each of the plurality of semiconductor elements and filling a portion of each of the plurality of trenches;

providing an interlayer over the sacrificial layer, the interlayer having different chemical selectivity than the sacrificial layer, wherein a portion of the interlayer contacts the source substrate at the base of each of the plurality of trenches to form a plurality of anchors;

adhering the interlayer to a handle substrate;

removing the source substrate to expose the substrate side of each of the plurality semiconductor elements;

removing a portion of each of the plurality of semiconductor elements to form a plurality of cantilever extensions, each cantilever extension of one of the plurality of semiconductor elements;

forming a plurality of first electrical contacts, each on one of the plurality of cantilever extensions;

forming a plurality of second electrical contacts, each on the exposed substrate side of one of the plurality of semiconductor elements;

optionally forming a plurality of tethers bridging the exposed substrate side of one of the plurality of semiconductor elements to one of the plurality of anchors; and

removing the sacrificial layer, thereby forming a printable semiconductor structure partially released from the handle substrate.

18. A method of making an array of inorganic semiconductor structures suitable for micro-transfer printing, comprising:

providing a source substrate;

forming a semiconductor layer on the source substrate, wherein the semiconductor layer has a first side and a second side opposite the first side and adjacent to the substrate;

removing a portion of the semiconductor layer to form a plurality of cantilever extensions;

forming a plurality of first electrical contacts on the semiconductor layer;

form a plurality of second electrical contact, each on one of the plurality of cantilever extensions;

removing a portion of the semiconductor layer surrounding each pair of first and second electrical contacts to form a plurality of trenches, each surrounding a semiconductor element of a plurality of semiconductor elements made from the semiconductor layer, the plurality of semiconductor elements having a substrate side in contact with the source substrate and a handle side opposite the substrate side;

providing a sacrificial layer covering the plurality of first and second electrical contacts and covering at least a portion of the handle side of each of the plurality of semiconductor elements and filling a portion of each of the plurality of trenches;

providing an interlayer over the sacrificial layer, the interlayer having different chemical selectivity than the sacrificial layer, wherein a portion of the interlayer contacts the source substrate at the base of each of the plurality of trenches to form a plurality of anchors;

adhering the interlayer to a handle substrate;

removing the source substrate to expose the substrate side of each of the plurality of semiconductor elements;

optionally forming a plurality of tethers, each bridging the exposed substrate side of one of the plurality of semiconductor elements to one of the plurality of anchors; and

removing the sacrificial layer, thereby forming a plurality of printable semiconductor structures partially released from the handle substrate and physically secured to a respective anchor by a corresponding tether.