Device manufactured by room-temperature bonding, device manufacturing method, and room-temperature bonding apparatus

• US 10,112,376 B2
• Filed: 05/09/2016
• Issued: 10/30/2018
• Est. Priority Date: 05/30/2006
• Status: Active Grant

• Current Assignee: National Institute of Advanced Industrial Science and Technology (Government of Japan), Mitsubishi Heavy Industries Machine Tool Co., Ltd. (Nidec Corporation)
• Original Assignee: National Institute of Advanced Industrial Science and Technology (Government of Japan), Mitsubishi Heavy Industries Machine Tool Co., Ltd. (Nidec Corporation)
• Inventors: Utsumi, Jun, Goto, Takayuki, Ide, Kensuke, Funayama, Masahiro, Takagi, Hideki
• Primary Examiner(s): Stoner, Kiley S
• Application Number:
  US15/149,891
• Publication Number:
  US 20160250838A1
• Time in Patent Office: 904 Days
• Field of Search: 228121-1247, 2282351-2353, 2282341, 228115-117, 228 31
• CPC Class Codes: B23K 20/02 by means of a press ; Diffusion bonding B23K20/001, B23K20/04 take precedence
• CPC Class Codes: B23K 20/22 taking account of the properties of the materials to be welded
• CPC Class Codes: B32B 2457/00 Electrical equipment
• CPC Class Codes: B32B 37/14 characterised by the properties of the layers
• CPC Class Codes: B32B 38/0008 Electrical discharge treatment, e.g. corona, plasma treatment; wave energy or particle radiation heat treatment B32B38/0036
• CPC Class Codes: B81C 2203/032 Gluing
• CPC Class Codes: B81C 3/001 Bonding of two components
• CPC Class Codes: C23C 14/14 Metallic material, boron or silicon
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• CPC Class Codes: C23C 14/58 After-treatment
• CPC Class Codes: Y10T 428/31678 Of metal

Abstract

An inter-substrate material layer is formed between a first substrate and a second substrate to generate a bonding strength. A plurality of metal elements are present in the inter-substrate material layer. An interface element existence ratio of the plurality of metal elements is 0.07 or above. A device can be obtained in which substrates difficult to bond (for example, SiO₂ substrates) are bonded at room-temperature to have practical bonding strength.

Claims

1. A method of manufacturing a device, comprising:

performing sputtering on a surface of a first substrate, such that sputtering ions directly emit to the first substrate and a second substrate;

attaching one or more metal elements onto the surface of said first substrate; and

bonding the second substrate to the surface of said first substrate at room temperature,

wherein the performing sputtering comprises sputtering ions missing the first substrate and the second substrate to emit to a metal emitter to sputter the metal emitter, and

wherein an interface element existence ratio of said one or more metal elements is 0.07 or above and 0.6 or below,

wherein the performing sputtering comprises sputtering ions to a substrate holding mechanism that supports the first and second substrates in a chamber, the substrate holding mechanism being made of metal, and wherein the substrate holding mechanism includes an upper stage that holds the first substrate and a lower stage that holds the second substrate.

2. The method according to claim 1, wherein the interface element existence ratio of said one or more metal elements is 0.1 or above.

3. The method according to claim 2, wherein the interface element existence ratio of said one or more metal elements is 0.2 or above.

4. The method according to claim 1, further comprising:

performing the sputtering on a surface of said second substrate at the same time that the surface of said first substrate is sputtered.

5. The method according to claim 1, wherein said performing is performed as the same time as said attaching.

6. The method according to claim 1, wherein said performing comprises:

radiating accelerated particles to sputter the surface of said first substrate, and

said attaching comprises;

attaching said one or more metal elements on the surface of said first substrate, wherein said one or more metal elements are emitted from a metal emitter to which the accelerated particles are radiated.

7. The method according to claim 6, wherein said metal emitter is at least one of a bonding apparatus, structural members and parts of a substrate holding mechanism a stage moving mechanism, and a substrate pressure welding mechanism disposed in said bonding apparatus.

8. The method according to claim 6, wherein a parameter of the radiation of the particles is a velocity of the particles.

9. The method according to claim 6, wherein a parameter of the radiation of the particles is a radiation time during which the particles are radiated.

10. The method according to claim 6, wherein a parameter of the radiation of the particles is an amount of the particles radiated onto the surface of said first substrate per a unit time.

11. The method according to any of claim 1, wherein a plurality of said metal elements are attached, and

said plurality of metal elements are a set of metal elements selected the group consisting of:

a set of iron and chromium,

a set of iron and aluminum,

a set of iron, chromium, and aluminum,

a set of iron, chromium, and nickel, and

a set of iron, chromium, nickel, and aluminum.

12. The method according to claim 9, wherein the radiation time during which the particles are radiated is longer than 100 seconds and shorter than 600 seconds.

13. The method according to claim 12, wherein a coupling energy is 0.5 J/m² or above.