Methods for producing borylated arenes
First Claim
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1. A method of forming a borylated arene comprising:
- providing a substrate comprising a substituted arene ring comprising from 1 to 4 substituents, wherein the arene ring is unsubstituted at a first position that is electronically favored for CH-activation and unsubstituted at a second position that is sterically favored for CH-activation; and
contacting the substrate with an iridium precursor complex, an electron deficient bidentate ligand comprising at least one nitrogen heteroatom, and a borylation reagent under conditions effective to form a first borylated arene and optionally a second borylated arene;
wherein the electron deficient bidentate ligand comprises a compound defined by Formula IVa
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Abstract
Methods for the selective borylation of arenes, including arenes substituted with an electron-withdrawing group (e.g., 1-chloro-3-fluoro-2-substituted benzenes) are provided. The methods can be used, in some embodiments, to efficiently and regioselectively prepare borylated arenes without the need for expensive cryogenic reaction conditions.
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13 Claims
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1. A method of forming a borylated arene comprising:
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providing a substrate comprising a substituted arene ring comprising from 1 to 4 substituents, wherein the arene ring is unsubstituted at a first position that is electronically favored for CH-activation and unsubstituted at a second position that is sterically favored for CH-activation; and contacting the substrate with an iridium precursor complex, an electron deficient bidentate ligand comprising at least one nitrogen heteroatom, and a borylation reagent under conditions effective to form a first borylated arene and optionally a second borylated arene; wherein the electron deficient bidentate ligand comprises a compound defined by Formula IVa - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification