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One time accessible (OTA) non-volatile memory

  • US 10,115,467 B2
  • Filed: 09/25/2015
  • Issued: 10/30/2018
  • Est. Priority Date: 09/30/2014
  • Status: Active Grant
First Claim
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1. A method of operating a floating gate based non-volatile memory cell device that operates to store a logic state based on a value of a charge physically present on the floating gate in a memory cell, such that a first amount of charge represents a first logical value, and a second amount of charge represents a second logical value, the improvement comprising:

  • a hybrid read operation that when effectuated;

    i. reads the stored memory cell logic state during a first phase;

    andii. erases the stored memory cell logic state during an immediately subsequent second phase;

    iii. senses said stored memory cell logical state by at least one of;

         1) integrating a total charge flowing through the device during at least a portion of time of said hybrid read operation; and

    /or

         2) detecting a change in current as a function of at least a portion of time of said hybrid read operation for said memory device;

    wherein a threshold voltage of the floating gate based memory cell device is caused to increase during an entirety of said hybrid read operation;

    further wherein a stored logic state of the non-volatile memory cell device can be read at most once before it is erased.

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