Semiconductor component having through-silicon vias and method of manufacture
First Claim
Patent Images
1. A semiconductor component comprising:
- a semiconductor substrate having an opening;
a first dielectric liner having a first stress over an interior surface of the opening;
a second dielectric liner having a second stress over the first dielectric liner, wherein a direction of the first stress is opposite a direction of the second stress; and
a conductive material over the second dielectric liner.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor component includes a semiconductor substrate having an opening A first dielectric liner having a first compressive stress is disposed in the opening. A second dielectric liner having a tensile stress is disposed on the first dielectric liner. A third dielectric liner having a second compressive stress disposed on the second dielectric liner.
82 Citations
20 Claims
-
1. A semiconductor component comprising:
-
a semiconductor substrate having an opening; a first dielectric liner having a first stress over an interior surface of the opening; a second dielectric liner having a second stress over the first dielectric liner, wherein a direction of the first stress is opposite a direction of the second stress; and a conductive material over the second dielectric liner. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A semiconductor component comprising:
-
a semiconductor substrate having an opening; a first dielectric liner over an interior surface of the opening, the first dielectric liner having a first etching rate in an HF solution, wherein the first dielectric liner has a first thickness adjacent to a top surface of the substrate and a second thickness adjacent to a bottom surface of the substrate, and the first thickness is different from the second thickness; a second dielectric liner over the first dielectric liner, the second dielectric liner having a second etching rate in the HF solution, wherein the first etching rate is different from the second etching rate; and a conductive material over the second dielectric liner, wherein at least one surface of the conductive material is level with at least one surface of the semiconductor substrate. - View Dependent Claims (9, 10, 11, 12, 20)
-
-
13. A semiconductor component comprising:
-
a semiconductor substrate having an opening; a first dielectric liner over an interior surface of the opening, wherein the first dielectric liner has a first etching rate in an HF solution, and the first dielectric liner has a first stress in a first direction; a second dielectric liner over the first dielectric liner, wherein the second dielectric liner has a second etching rate in the HF solution different from the first etching rate, and the second dielectric liner has a second stress in a second direction opposite the first direction; and a conductive material over the second dielectric liner. - View Dependent Claims (14, 15, 16, 17, 18, 19)
-
Specification