Analog circuit and semiconductor device

• US 10,115,743 B2
• Filed: 07/18/2017
• Issued: 10/30/2018
• Est. Priority Date: 10/21/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Koyama, Jun, Hirose, Atsushi, Tsubuku, Masashi, Noda, Kosei
• Primary Examiner(s): Zweizig, Jeffrey
• Application Number:
  US15/652,312
• Publication Number:
  US 20170317112A1
• Time in Patent Office: 469 Days
• Field of Search: None
• CPC Class Codes: H01L 21/823412 with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/36 characterised by the concentration or distribution of impurities in the bulk material within semiconductor regions H01L29/06
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/00 Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof H10K50/00 takes precedence; devices consisting of a plurality of semiconductor components formed in or on a common substrate and including semiconductor components having potential barriers, specially adapted for light emission H01L27/15; semiconductor lasers H01S5/00
• CPC Class Codes: H01L 33/025 Physical imperfections, e.g. particular concentration or distribution of impurities
• CPC Class Codes: H04M 1/0266 for a display module assembly
• CPC Class Codes: H04R 1/02 Casings; Cabinets ; Supports therefor; Mountings therein H04R1/28 takes precedence ; attachments for microphones H04R1/08; mounting of transducers in earpieces H04R1/1075
• CPC Class Codes: H10K 59/351 comprising more than three subpixels, e.g. red-green-blue-white [RGBW]

Abstract

An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×10¹⁹ atoms/cm³ or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

Claims

1. A semiconductor device comprising:

a first transistor;

a second transistor comprising an oxide semiconductor layer including a channel region;

a third transistor;

an insulating layer including an opening over the first transistor, the second transistor, and the third transistor;

a color filter over the insulating layer;

a light-emitting element including a first electrode over the color filter; and

a capacitor;

a signal line; and

a power supply line;

wherein one of a source and a drain of the first transistor is directly connected to the signal line,

wherein the other one of the source and the drain of the first transistor is directly connected to a gate of the second transistor and one terminal of the capacitor,

wherein the other one terminal of the capacitor is directly connected to one of the source and the drain of the second transistor, one of a source and a drain of the third transistor, and the light-emitting element,

wherein the other one of the source and the drain of the second transistor is directly connected to the power supply line,

wherein the opening does not overlap with the color filter and an edge portion of the opening does not align with an edge portion of the color filter,

wherein the oxide semiconductor layer comprises In, Ga, and Zn, and

wherein the first electrode is directly connected to the one of the source and the drain of the second transistor through the opening.

2. The semiconductor device according to claim 1, wherein the light-emitting element is a white light-emitting element.

3. The semiconductor device according to claim 1, wherein an off-state current of the second transistor is 10⁻

13 A or less at a drain voltage of 1V to 10V and a gate voltage of −

5V to −

20V.

4. A display device comprising a display portion and a housing, wherein the display portion comprises the semiconductor device according to claim 1.

5. A cellular phone comprising a display portion, a speaker, an operation button, and a microphone, wherein the display portion comprises the semiconductor device according to claim 1.

6. A semiconductor device comprising:

a first transistor comprising a first oxide semiconductor layer including a first channel region;

a second transistor comprising a second oxide semiconductor layer including a second channel region;

a third transistor comprising a third oxide semiconductor layer including a third channel region;

an insulating layer including an opening over the first transistor, the second transistor, and the third transistor;

a color filter over the insulating layer;

a light-emitting element including a first electrode over the color filter; and

a capacitor;

a signal line; and

a power supply line,

wherein one of a source and a drain of the first transistor is directly connected to the signal line,

wherein the other one of the source and the drain of the first transistor is directly connected to a gate of the second transistor and one terminal of the capacitor,

wherein the other one terminal of the capacitor is directly connected to one of the source and the drain of the second transistor, one of a source and a drain of the third transistor, and the light-emitting element,

wherein the other one of the source and the drain of the second transistor is directly connected to the power supply line,

wherein the opening does not overlap with the color filter and an edge portion of the opening does not align with an edge portion of the color filter,

wherein each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises In, Ga, and Zn, and

wherein the first electrode is directly connected to the one of the source and the drain of the second transistor through the opening.

7. The semiconductor device according to claim 6, wherein the light-emitting element is a white light-emitting element.

8. The semiconductor device according to claim 6, wherein an off-state current of the second transistor is 10⁻

13 A or less at a drain voltage of 1V to 10V and a gate voltage of −

5V to −

20V.

9. A display device comprising a display portion and a housing, wherein the display portion comprises the semiconductor device according to claim 6.

10. A cellular phone comprising a display portion, a speaker, an operation button, and a microphone, wherein the display portion comprises the semiconductor device according to claim 6.

11. A semiconductor device comprising:

a transistor comprising an oxide semiconductor layer including a channel region;

an insulating layer including an opening over the transistor;

a color filter over the insulating layer; and

a light-emitting element including a first electrode over the color filter;

wherein the opening does not overlap with the color filter and an edge portion of the opening does not align with an edge portion of the color filter,

wherein the oxide semiconductor layer comprises In, Ga, and Zn, and

wherein the first electrode is directly connected to the one of the source and the drain of the transistor through the opening.

12. The semiconductor device according to claim 11, wherein the light-emitting element is a white light-emitting element.

13. The semiconductor device according to claim 11, wherein an off-state current of the transistor is 10⁻

13 A or less at a drain voltage of 1V to 10V and a gate voltage of −

5V to −

20V.

14. A display device comprising a display portion and a housing, wherein the display portion comprises the semiconductor device according to claim 11.

15. A cellular phone comprising a display portion, a speaker, an operation button, and a microphone, wherein the display portion comprises the semiconductor device according to claim 11.